Modeling and Simulation of Arsenic Diffusion in monoSilicon: Insights into Doping for Photovoltaic Cells

Doping in semiconductors is possible by introducing atoms into the crystal that have a different valence than the elements composing the semiconductor. Doping makes it possible to control the concentration of charges. This very important step in the manufacture of photovoltaic cells is mainly achieved through thermal diffusion. The emitter layer is produced during the diffusion doping process. In this work, modeling dopant diffusion involves numerically solving the diffusion equations that describe the variation of dopant concentration in monosilicon as a function of time and space. This approach enables the prediction of the distribution of arsenic in photovoltaic monosilicon based on diffusion parameters such as temperature, heat treatment duration, and dopant concentration.