C20富勒烯结构的磁性和磁热学性质:蒙特卡罗研究

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
A. Jabar, S. Benyoussef, L. Bahmad
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引用次数: 0

摘要

富勒烯C20是纳米结构中最具活性的一类,作为一种活性成分已被广泛应用。本文采用蒙特卡罗模拟方法研究了混合自旋为2和3/2的富勒烯C20体系的磁性和磁热学性质。根据已经建立的基态相图,铁磁相和铁磁相是稳定的。磁化行为,特别是磁化导数,显示了温度升高的影响。此外,当自旋S之间的相互作用增强时,观察到还原居里温度增加到约tC≈3。对于大量的外加磁场和温度的降低,研究了磁熵的变化。计算相对冷却功率(RCP)。结果表明,交换耦合相互作用p和r的减小会导致磁化后的矫顽力增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetic and magnetocaloric properties of a C20 fullerene structure: Monte Carlo study

One of the most active classes of nanostructures is fullerene C20, which has been exploited as an active component in significant applications. In this investigation, Monte Carlo simulation is used to investigate the magnetic and magnetocaloric properties of the mixed spins 2 and 3/2 fullerene C20 system. Ferrimagnetic and ferromagnetic phases are stable, according to the ground state phase diagrams that have been constructed. The behavior of the magnetizations and the derivative of magnetization, in particular, have shown the impact of rising temperature. Additionally, an increase of the reduced Curie temperature to approximately tC ≈ 3 was observed when the interactions between the spins S were strengthened. For numerous reduced external magnetic fields and reduced temperatures, the magnetic entropy variations are studied. The Relative Cooling Power (RCP) is calculated. It is demonstrated that the reduced exchange coupling interactions, p and r, lead to an increase in the reduced magnetic coercive field.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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