{"title":"无铅、稳定、混合锗钙钛矿，用于室内和空间条件下的光电转换应用","authors":"Dhonvan Srinu, Atul Kumar","doi":"10.1007/s10825-025-02367-6","DOIUrl":null,"url":null,"abstract":"<div><p>The substitution of Pb by mixed Sn–Ge in perovskite materials has shown enhanced structural stability, due to the formation of a thin superficial layer of germanium oxide which effectively shielding the inner atoms, boosting thermal stability and relieving lead toxicity. A theoretical analysis of stable mixed Sn–Ge perovskites, specifically MA(Sn<sub>0.5</sub>Ge<sub>0.5</sub>)I<sub>3</sub>, Cs(Sn<sub>0.5</sub>Ge<sub>0.5</sub>)I<sub>3</sub>, and Rb(Sn<sub>0.5</sub>Ge<sub>0.5</sub>)I<sub>3</sub> is presented in context of space, terrestrial, and indoor conditions. Initially, mixed Sn–Ge perovskite viability is probed in terms of optical properties and material suitability for light-to-electricity conversion. A comparative analysis of power conversion efficiency, achievable output power under AM0 (space), AM1.5G (terrestrial), and CFL (indoor) is undertook. Finally manuscript summarizes the available incident illuminations, the extent of their dissipation in the device as (spectrum and radiative losses) and the remaining fraction as output electrical power. Simulation results substantiate pragmatic prospects of mixed Sn–Ge in perovskite for light to electricity conversion applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lead-free, stable, mixed SnGe perovskites for light to electricity conversion applications in indoor and space conditions\",\"authors\":\"Dhonvan Srinu, Atul Kumar\",\"doi\":\"10.1007/s10825-025-02367-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The substitution of Pb by mixed Sn–Ge in perovskite materials has shown enhanced structural stability, due to the formation of a thin superficial layer of germanium oxide which effectively shielding the inner atoms, boosting thermal stability and relieving lead toxicity. A theoretical analysis of stable mixed Sn–Ge perovskites, specifically MA(Sn<sub>0.5</sub>Ge<sub>0.5</sub>)I<sub>3</sub>, Cs(Sn<sub>0.5</sub>Ge<sub>0.5</sub>)I<sub>3</sub>, and Rb(Sn<sub>0.5</sub>Ge<sub>0.5</sub>)I<sub>3</sub> is presented in context of space, terrestrial, and indoor conditions. Initially, mixed Sn–Ge perovskite viability is probed in terms of optical properties and material suitability for light-to-electricity conversion. A comparative analysis of power conversion efficiency, achievable output power under AM0 (space), AM1.5G (terrestrial), and CFL (indoor) is undertook. Finally manuscript summarizes the available incident illuminations, the extent of their dissipation in the device as (spectrum and radiative losses) and the remaining fraction as output electrical power. Simulation results substantiate pragmatic prospects of mixed Sn–Ge in perovskite for light to electricity conversion applications.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"24 4\",\"pages\":\"\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-025-02367-6\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-025-02367-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Lead-free, stable, mixed SnGe perovskites for light to electricity conversion applications in indoor and space conditions
The substitution of Pb by mixed Sn–Ge in perovskite materials has shown enhanced structural stability, due to the formation of a thin superficial layer of germanium oxide which effectively shielding the inner atoms, boosting thermal stability and relieving lead toxicity. A theoretical analysis of stable mixed Sn–Ge perovskites, specifically MA(Sn0.5Ge0.5)I3, Cs(Sn0.5Ge0.5)I3, and Rb(Sn0.5Ge0.5)I3 is presented in context of space, terrestrial, and indoor conditions. Initially, mixed Sn–Ge perovskite viability is probed in terms of optical properties and material suitability for light-to-electricity conversion. A comparative analysis of power conversion efficiency, achievable output power under AM0 (space), AM1.5G (terrestrial), and CFL (indoor) is undertook. Finally manuscript summarizes the available incident illuminations, the extent of their dissipation in the device as (spectrum and radiative losses) and the remaining fraction as output electrical power. Simulation results substantiate pragmatic prospects of mixed Sn–Ge in perovskite for light to electricity conversion applications.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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