用于硬件加速器的5T-2MTJ stt辅助自旋-轨道-转矩三元内容可寻址存储器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Siri Narla;Piyush Kumar;Azad Naeemi
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引用次数: 0

摘要

在这项工作中,我们提出了一种新的非易失性自旋转移扭矩(STT)辅助自旋轨道扭矩(SOT)的基于五个晶体管和两个磁隧道结(MTJs)的三元内容可寻址存储器(TCAM)。我们从设备级到应用级对提议的设计进行了全面的研究。在器件级,各种写入特性,如写入错误率,时间,和电流已获得使用微磁模拟。阵列级搜索和写入性能基于SPICE电路模拟进行了评估,其中包含了位单元的布局提取寄生,同时考虑了7nm技术节点上互连寄生的影响。在考虑设计中各种变化来源的同时,预测精确搜索的搜索错误率(SER)为$3.9 \乘以10{^{-}11}$。此外,在各种场景下对搜索操作的分辨率进行量化,以了解近似搜索操作的可实现质量。在基于CAM的推荐系统的背景下,对所提出设计的应用级性能和准确性进行了评估,并与其他最先进的CAM设计进行了基准测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 5T-2MTJ STT-Assisted Spin-Orbit-Torque-Based Ternary Content Addressable Memory for Hardware Accelerators
In this work, we present a novel non-volatile spin transfer torque (STT)-assisted spin–orbit torque (SOT)-based ternary content addressable memory (TCAM) with five transistors and two magnetic tunnel junctions (MTJs). We perform a comprehensive study of the proposed design from the device level to the application level. At the device level, various write characteristics such as the write error rate, time, and current have been obtained using micromagnetic simulations. The array-level search and write performance have been evaluated based on SPICE circuit simulations with layout extracted parasitics for bit-cells while also accounting for the impact of interconnect parasitics at the 7 nm technology node. A search error rate (SER) of $3.9 \times 10 {^{-}11 }$ is projected for exact search while accounting for various sources of variation in the design. In addition, the resolution of the search operation is quantified under various scenarios to understand the achievable quality of the approximate search operations. Application-level performance and accuracy of the proposed design have been evaluated and benchmarked against other state-of-the-art CAM designs in the context of a CAM-based recommendation system.
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来源期刊
IEEE Transactions on Magnetics
IEEE Transactions on Magnetics 工程技术-工程:电子与电气
CiteScore
4.00
自引率
14.30%
发文量
565
审稿时长
4.1 months
期刊介绍: Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
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