具有定制合成反铁磁耦合和垂直磁各向异性的自旋阀的工程自旋配置

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Magnetics Pub Date : 2025-08-12 DOI:10.1109/TMAG.2025.3598105

Yongliang Han;Wei Su;Zhuoyue Liu;Lisong Wang;Zhongqiang Hu;Zhiguang Wang;Ming Liu

{"title":"具有定制合成反铁磁耦合和垂直磁各向异性的自旋阀的工程自旋配置","authors":"Yongliang Han;Wei Su;Zhuoyue Liu;Lisong Wang;Zhongqiang Hu;Zhiguang Wang;Ming Liu","doi":"10.1109/TMAG.2025.3598105","DOIUrl":null,"url":null,"abstract":"Manipulation of the spin configuration in multilayer ferromagnetic thin films, especially for ones with synthetic antiferromagnetic (SAF) coupling, is of paramount importance for the construction of various spintronics. Here, perpendicular SAF heterostructures consisting of [Pt/Co]/Ru/[Co/Pt] have been developed. A large saturation field of 0.67 T has been observed, indicating a strong perpendicular antiferromagnetic (AFM) coupling. More importantly, we have fabricated a spin valve giant magnetoresistance (GMR) device based on SAF/Cu/NiFe multilayers. Transformation from in-plane magnetic anisotropy to perpendicular magnetic anisotropy (PMA) has been realized in the top NiFe layer by control of the Cu thickness and thus the interlayer coupling effect. The polarity of the SAF during the magnetization switching process could be customized by the control of the coupling type [ferromagnetic or antiferromagnetic (AFM)] between SAF and top NiFe layer or change of the periodicity of the Co/Pt multilayers. The spin configuration control strategy reported here provides new insights for the design of customized magnetic sensing, recording, and logic devices.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 10","pages":"1-6"},"PeriodicalIF":1.9000,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Engineered Spin Configuration in Spin Valve With Customized Synthetic Antiferromagnetic Coupling and Perpendicular Magnetic Anisotropy\",\"authors\":\"Yongliang Han;Wei Su;Zhuoyue Liu;Lisong Wang;Zhongqiang Hu;Zhiguang Wang;Ming Liu\",\"doi\":\"10.1109/TMAG.2025.3598105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Manipulation of the spin configuration in multilayer ferromagnetic thin films, especially for ones with synthetic antiferromagnetic (SAF) coupling, is of paramount importance for the construction of various spintronics. Here, perpendicular SAF heterostructures consisting of [Pt/Co]/Ru/[Co/Pt] have been developed. A large saturation field of 0.67 T has been observed, indicating a strong perpendicular antiferromagnetic (AFM) coupling. More importantly, we have fabricated a spin valve giant magnetoresistance (GMR) device based on SAF/Cu/NiFe multilayers. Transformation from in-plane magnetic anisotropy to perpendicular magnetic anisotropy (PMA) has been realized in the top NiFe layer by control of the Cu thickness and thus the interlayer coupling effect. The polarity of the SAF during the magnetization switching process could be customized by the control of the coupling type [ferromagnetic or antiferromagnetic (AFM)] between SAF and top NiFe layer or change of the periodicity of the Co/Pt multilayers. The spin configuration control strategy reported here provides new insights for the design of customized magnetic sensing, recording, and logic devices.\",\"PeriodicalId\":13405,\"journal\":{\"name\":\"IEEE Transactions on Magnetics\",\"volume\":\"61 10\",\"pages\":\"1-6\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Magnetics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11123529/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Magnetics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11123529/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

对多层铁磁薄膜，特别是具有合成反铁磁（SAF）耦合的薄膜的自旋构型的控制，对于构建各种自旋电子学具有至关重要的意义。在这里，形成了由[Pt/Co]/Ru/[Co/Pt]组成的垂直SAF异质结构。观测到0.67 T的大饱和场，表明存在强垂直反铁磁耦合。更重要的是，我们制作了一个基于SAF/Cu/NiFe多层材料的自旋阀巨磁阻（GMR）器件。通过控制Cu厚度和层间耦合效应，实现了NiFe顶层从面内磁各向异性向垂直磁各向异性的转变。在磁化转换过程中，SAF的极性可以通过控制SAF与顶层NiFe层之间的耦合类型[铁磁或反铁磁（AFM）]或改变Co/Pt多层膜的周期来定制。本文报道的自旋配置控制策略为定制磁传感、记录和逻辑器件的设计提供了新的见解。

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Engineered Spin Configuration in Spin Valve With Customized Synthetic Antiferromagnetic Coupling and Perpendicular Magnetic Anisotropy

Manipulation of the spin configuration in multilayer ferromagnetic thin films, especially for ones with synthetic antiferromagnetic (SAF) coupling, is of paramount importance for the construction of various spintronics. Here, perpendicular SAF heterostructures consisting of [Pt/Co]/Ru/[Co/Pt] have been developed. A large saturation field of 0.67 T has been observed, indicating a strong perpendicular antiferromagnetic (AFM) coupling. More importantly, we have fabricated a spin valve giant magnetoresistance (GMR) device based on SAF/Cu/NiFe multilayers. Transformation from in-plane magnetic anisotropy to perpendicular magnetic anisotropy (PMA) has been realized in the top NiFe layer by control of the Cu thickness and thus the interlayer coupling effect. The polarity of the SAF during the magnetization switching process could be customized by the control of the coupling type [ferromagnetic or antiferromagnetic (AFM)] between SAF and top NiFe layer or change of the periodicity of the Co/Pt multilayers. The spin configuration control strategy reported here provides new insights for the design of customized magnetic sensing, recording, and logic devices.

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来源期刊

IEEE Transactions on Magnetics 工程技术-工程：电子与电气

CiteScore

4.00

自引率

14.30%

发文量

565

审稿时长

4.1 months

期刊介绍： Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.