揭示ZnCl2在提高氨基as基InAs@ZnSe量子点光致发光效率中的作用

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2025-09-24 DOI:10.1021/acsnano.5c10371
Dongxu Zhu, , , Jordi Llusar, , , Aswin Asaithambi, , , Zheming Liu, , , René Bes, , , Damien Prieur, , , Hiba H. Karakkal, , , Mirko Prato, , , Sergio Brovelli, , , Gabriele Saleh, , , Satyaprakash Panda, , , Ivan Infante*, , , Luca De Trizio*, , and , Liberato Manna*, 
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引用次数: 0

摘要

我们研究了ZnCl2作为添加剂如何在氨基as基合成砷化铟(InAs)量子点(QDs)中显著提高所得到的InAs@ZnSe core@shell量子点的光致发光量子产率(PLQY)。我们通过合成和比较三种不同的InAs量子点样品及其相应的core@shell结构来实现这一目标:(1)In(Zn)As量子点(用ZnCl2合成);(2)标准InAs量子点(标准InAs,不含添加剂);(3)用ZnCl2 (Zn-InAs)处理后合成std-InAs量子点。只有使用In(Zn)As@ZnSe量子点才能获得高PLQY值(~ 70%),而std-InAs@ZnSe和Zn -InAs@ZnSe样品的PL效率要低得多(10-20%)。我们还证明(i) in (Zn)As@ZnSe量子点中的高PLQY不能仅仅归因于in - Zn - se中间层的存在,因为这存在于所有三个样品中;(ii)具体的ZnSe炮击程序对最终PLQY的影响很小;(iii)只有在合成InAs量子点时使用大量的ZnCl2添加剂(特别是ZnCl2:InCl3前驱体比超过10:1)才能显著提高PL效率。这些发现通过密度泛函理论(DFT)计算和x射线吸收光谱测量加以合理化。DFT模型表明,std-InAs量子点具有表面陷阱态,主要位于(−1-1-1)面,因此即使在ZnSe炮击后,PL效率也很低。在InAs合成中使用ZnCl2导致了表面Zn的掺入,特别是在(100)和(- 1-1-1)面,有效地钝化了表面陷阱,从而产生了高发射的in (Zn)As@ZnSe QD体系。相比之下,在std-InAs量子点的合成后处理中使用的ZnCl2只导致了有限的表面Zn掺入和ZnCl2在(−1-1-1)面上的吸附(即ZnCl2作为z型配体),导致表面陷阱钝化效果差。总的来说,我们的研究证明了ZnCl2作为合成添加剂在提供高发射氨基as基InAs@ZnSe量子点中的关键作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Unveiling the Role of ZnCl2 in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots

Unveiling the Role of ZnCl2 in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots

We investigated how ZnCl2, employed as an additive in the amino-As-based synthesis of indium arsenide (InAs) quantum dots (QDs), considerably improves the photoluminescence quantum yield (PLQY) of the resulting InAs@ZnSe core@shell QDs. We achieved this by synthesizing and comparing three distinct InAs QD samples and their corresponding core@shell structures: (1) In(Zn)As QDs (synthesized with ZnCl2); (2) standard InAs QDs (std-InAs, made without additives); and (3) std-InAs QDs postsynthesis treated with ZnCl2 (Zn–InAs). High PLQY values (∼70%) were attained only with In(Zn)As@ZnSe QDs, while std-InAs@ZnSe and Zn–InAs@ZnSe samples exhibited much lower PL efficiencies (10–20%). We also demonstrated that (i) the high PLQY in In(Zn)As@ZnSe QDs could not be attributed solely to the presence of an In–Zn–Se interlayer, as this was present in all three samples; (ii) the specific ZnSe shelling procedure had only a minor impact on the final PLQY; and (iii) the PL efficiency was significantly improved only when high amounts of ZnCl2 additive (specifically with ZnCl2:InCl3 precursor ratios over 10:1) were used during the InAs QDs synthesis. These findings were rationalized through density functional theory (DFT) calculations coupled with X-ray absorption spectroscopy measurements. DFT models suggested that std-InAs QDs feature surface trap states, mainly located on the (−1–1–1) facets, thus low PL efficiency even after ZnSe shelling. The use of ZnCl2 in the InAs synthesis led to surface Zn incorporation, particularly on the (100) and (−1–1–1) facets, effectively passivating surface traps and, consequently, yielding highly emissive In(Zn)As@ZnSe QD systems. In contrast, ZnCl2 employed in the postsynthesis treatment of std-InAs QDs resulted only in a limited surface Zn incorporation and in ZnCl2 adsorption on the (−1–1–1) facets (i.e., ZnCl2 acting as a Z-type ligand), leading to poor passivation of surface traps. Overall, our study demonstrates the critical role of ZnCl2 as a synthesis additive in delivering highly emissive amino-As-based InAs@ZnSe QDs.

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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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