{"title":"揭示ZnCl2在提高氨基as基InAs@ZnSe量子点光致发光效率中的作用","authors":"Dongxu Zhu, , , Jordi Llusar, , , Aswin Asaithambi, , , Zheming Liu, , , René Bes, , , Damien Prieur, , , Hiba H. Karakkal, , , Mirko Prato, , , Sergio Brovelli, , , Gabriele Saleh, , , Satyaprakash Panda, , , Ivan Infante*, , , Luca De Trizio*, , and , Liberato Manna*, ","doi":"10.1021/acsnano.5c10371","DOIUrl":null,"url":null,"abstract":"<p >We investigated how ZnCl<sub>2</sub>, employed as an additive in the amino-As-based synthesis of indium arsenide (InAs) quantum dots (QDs), considerably improves the photoluminescence quantum yield (PLQY) of the resulting InAs@ZnSe core@shell QDs. We achieved this by synthesizing and comparing three distinct InAs QD samples and their corresponding core@shell structures: (1) In(Zn)As QDs (synthesized with ZnCl<sub>2</sub>); (2) standard InAs QDs (std-InAs, made without additives); and (3) std-InAs QDs postsynthesis treated with ZnCl<sub>2</sub> (Zn–InAs). High PLQY values (∼70%) were attained only with In(Zn)As@ZnSe QDs, while std-InAs@ZnSe and Zn–InAs@ZnSe samples exhibited much lower PL efficiencies (10–20%). We also demonstrated that (i) the high PLQY in In(Zn)As@ZnSe QDs could not be attributed solely to the presence of an In–Zn–Se interlayer, as this was present in all three samples; (ii) the specific ZnSe shelling procedure had only a minor impact on the final PLQY; and (iii) the PL efficiency was significantly improved only when high amounts of ZnCl<sub>2</sub> additive (specifically with ZnCl<sub>2</sub>:InCl<sub>3</sub> precursor ratios over 10:1) were used during the InAs QDs synthesis. These findings were rationalized through density functional theory (DFT) calculations coupled with X-ray absorption spectroscopy measurements. DFT models suggested that std-InAs QDs feature surface trap states, mainly located on the (−1–1–1) facets, thus low PL efficiency even after ZnSe shelling. The use of ZnCl<sub>2</sub> in the InAs synthesis led to surface Zn incorporation, particularly on the (100) and (−1–1–1) facets, effectively passivating surface traps and, consequently, yielding highly emissive In(Zn)As@ZnSe QD systems. In contrast, ZnCl<sub>2</sub> employed in the postsynthesis treatment of std-InAs QDs resulted only in a limited surface Zn incorporation and in ZnCl<sub>2</sub> adsorption on the (−1–1–1) facets (i.e., ZnCl<sub>2</sub> acting as a Z-type ligand), leading to poor passivation of surface traps. Overall, our study demonstrates the critical role of ZnCl<sub>2</sub> as a synthesis additive in delivering highly emissive amino-As-based InAs@ZnSe QDs.</p>","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"19 39","pages":"34807–34818"},"PeriodicalIF":16.0000,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnano.5c10371","citationCount":"0","resultStr":"{\"title\":\"Unveiling the Role of ZnCl2 in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots\",\"authors\":\"Dongxu Zhu, , , Jordi Llusar, , , Aswin Asaithambi, , , Zheming Liu, , , René Bes, , , Damien Prieur, , , Hiba H. Karakkal, , , Mirko Prato, , , Sergio Brovelli, , , Gabriele Saleh, , , Satyaprakash Panda, , , Ivan Infante*, , , Luca De Trizio*, , and , Liberato Manna*, \",\"doi\":\"10.1021/acsnano.5c10371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >We investigated how ZnCl<sub>2</sub>, employed as an additive in the amino-As-based synthesis of indium arsenide (InAs) quantum dots (QDs), considerably improves the photoluminescence quantum yield (PLQY) of the resulting InAs@ZnSe core@shell QDs. We achieved this by synthesizing and comparing three distinct InAs QD samples and their corresponding core@shell structures: (1) In(Zn)As QDs (synthesized with ZnCl<sub>2</sub>); (2) standard InAs QDs (std-InAs, made without additives); and (3) std-InAs QDs postsynthesis treated with ZnCl<sub>2</sub> (Zn–InAs). High PLQY values (∼70%) were attained only with In(Zn)As@ZnSe QDs, while std-InAs@ZnSe and Zn–InAs@ZnSe samples exhibited much lower PL efficiencies (10–20%). We also demonstrated that (i) the high PLQY in In(Zn)As@ZnSe QDs could not be attributed solely to the presence of an In–Zn–Se interlayer, as this was present in all three samples; (ii) the specific ZnSe shelling procedure had only a minor impact on the final PLQY; and (iii) the PL efficiency was significantly improved only when high amounts of ZnCl<sub>2</sub> additive (specifically with ZnCl<sub>2</sub>:InCl<sub>3</sub> precursor ratios over 10:1) were used during the InAs QDs synthesis. These findings were rationalized through density functional theory (DFT) calculations coupled with X-ray absorption spectroscopy measurements. DFT models suggested that std-InAs QDs feature surface trap states, mainly located on the (−1–1–1) facets, thus low PL efficiency even after ZnSe shelling. The use of ZnCl<sub>2</sub> in the InAs synthesis led to surface Zn incorporation, particularly on the (100) and (−1–1–1) facets, effectively passivating surface traps and, consequently, yielding highly emissive In(Zn)As@ZnSe QD systems. In contrast, ZnCl<sub>2</sub> employed in the postsynthesis treatment of std-InAs QDs resulted only in a limited surface Zn incorporation and in ZnCl<sub>2</sub> adsorption on the (−1–1–1) facets (i.e., ZnCl<sub>2</sub> acting as a Z-type ligand), leading to poor passivation of surface traps. Overall, our study demonstrates the critical role of ZnCl<sub>2</sub> as a synthesis additive in delivering highly emissive amino-As-based InAs@ZnSe QDs.</p>\",\"PeriodicalId\":21,\"journal\":{\"name\":\"ACS Nano\",\"volume\":\"19 39\",\"pages\":\"34807–34818\"},\"PeriodicalIF\":16.0000,\"publicationDate\":\"2025-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://pubs.acs.org/doi/pdf/10.1021/acsnano.5c10371\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Nano\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsnano.5c10371\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsnano.5c10371","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Unveiling the Role of ZnCl2 in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots
We investigated how ZnCl2, employed as an additive in the amino-As-based synthesis of indium arsenide (InAs) quantum dots (QDs), considerably improves the photoluminescence quantum yield (PLQY) of the resulting InAs@ZnSe core@shell QDs. We achieved this by synthesizing and comparing three distinct InAs QD samples and their corresponding core@shell structures: (1) In(Zn)As QDs (synthesized with ZnCl2); (2) standard InAs QDs (std-InAs, made without additives); and (3) std-InAs QDs postsynthesis treated with ZnCl2 (Zn–InAs). High PLQY values (∼70%) were attained only with In(Zn)As@ZnSe QDs, while std-InAs@ZnSe and Zn–InAs@ZnSe samples exhibited much lower PL efficiencies (10–20%). We also demonstrated that (i) the high PLQY in In(Zn)As@ZnSe QDs could not be attributed solely to the presence of an In–Zn–Se interlayer, as this was present in all three samples; (ii) the specific ZnSe shelling procedure had only a minor impact on the final PLQY; and (iii) the PL efficiency was significantly improved only when high amounts of ZnCl2 additive (specifically with ZnCl2:InCl3 precursor ratios over 10:1) were used during the InAs QDs synthesis. These findings were rationalized through density functional theory (DFT) calculations coupled with X-ray absorption spectroscopy measurements. DFT models suggested that std-InAs QDs feature surface trap states, mainly located on the (−1–1–1) facets, thus low PL efficiency even after ZnSe shelling. The use of ZnCl2 in the InAs synthesis led to surface Zn incorporation, particularly on the (100) and (−1–1–1) facets, effectively passivating surface traps and, consequently, yielding highly emissive In(Zn)As@ZnSe QD systems. In contrast, ZnCl2 employed in the postsynthesis treatment of std-InAs QDs resulted only in a limited surface Zn incorporation and in ZnCl2 adsorption on the (−1–1–1) facets (i.e., ZnCl2 acting as a Z-type ligand), leading to poor passivation of surface traps. Overall, our study demonstrates the critical role of ZnCl2 as a synthesis additive in delivering highly emissive amino-As-based InAs@ZnSe QDs.
期刊介绍:
ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.