{"title":"通过缺陷产生、缺陷钝化和过渡金属吸附揭示C3N4二维材料的磁性行为","authors":"Taoufik Sakhraoui, František Karlický","doi":"10.1007/s10853-025-11399-z","DOIUrl":null,"url":null,"abstract":"<div><p>Using the density functional tight binding method (DFTB) and the GFN1-xTB (geometries, frequencies, and noncovalent interactions tight binding) Hamiltonian, we have investigated the structural, electronic, and magnetic properties of vacancy defects, hydrogen- and oxygen-passivated defects, and Fe adsorption in two-dimensional (2D) graphitic carbon nitride (gt-<span>\\(\\hbox {C}_{\\textrm{3}}\\)</span> <span>\\(\\hbox {N}_{\\textrm{4}}\\)</span>) 2D material. The ring shape is the most preferred vacancy evolution path, with significant stability of the semicircle fourfold C-N-C-N vacancy. We found that bare gt-<span>\\(\\hbox {C}_{\\textrm{3}}\\)</span> <span>\\(\\hbox {N}_{\\textrm{4}}\\)</span> which is nonmagnetic becomes magnetic by 2- and 5-defect creation, hydrogen/oxygen passivation of the defects, and upon Fe adsorption. Interestingly, Fe atoms interact with the gt-<span>\\(\\hbox {C}_{\\textrm{3}}\\)</span> <span>\\(\\hbox {N}_{\\textrm{4}}\\)</span> sheet and result in a ground ferromagnetic (FM) state. In addition, we investigate the effects of passivating the vacancies by hydrogen in gt-<span>\\(\\hbox {C}_{\\textrm{3}}\\)</span> <span>\\(\\hbox {N}_{\\textrm{4}}\\)</span> on its structural, electrical, and magnetic properties. We found that substituting the 1-, 2-, and 3-vacancies with hydrogen and passivating the 6-defect with oxygen turn on magnetism in the system. Due to structural distortion, the passivated defects do not have a well-ordered magnetic orientation. However, passivating the remaining defected structures maintains the nonmagnetic state. It is also shown that passivation leads to a semiconductor with a band gap value higher than that of the bare material. We also calculate the electronic and magnetic properties of transition metal (TM) atoms, including V-, Cr-, Mn-, Fe-, Co-, Ni-adsorbed gt-<span>\\(\\hbox {C}_{\\textrm{3}}\\)</span> <span>\\(\\hbox {N}_{\\textrm{4}}\\)</span> monolayer. All TM atoms show slight lattice distortion, and the adsorbed system almost maintains the original structure type. Moreover, a FM alignment was observed with total magnetic moments of 2.89 <span>\\(\\mu _{\\textrm{B}}\\)</span>, 2 <span>\\(\\mu _{\\textrm{B}}\\)</span>, and 1 <span>\\(\\mu _{\\textrm{B}}\\)</span> for V, Fe, and Co atoms, respectively. The Cr, Mn, and Ni atoms induce no magnetism to the nonmagnetic gt-<span>\\(\\hbox {C}_{\\textrm{3}}\\)</span> <span>\\(\\hbox {N}_{\\textrm{4}}\\)</span> system.</p></div>","PeriodicalId":645,"journal":{"name":"Journal of Materials Science","volume":"60 37","pages":"16984 - 17000"},"PeriodicalIF":3.9000,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Unveiling the magnetic behavior of C3N4 2D material by defect creation, defect passivation, and transition metal adsorption\",\"authors\":\"Taoufik Sakhraoui, František Karlický\",\"doi\":\"10.1007/s10853-025-11399-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Using the density functional tight binding method (DFTB) and the GFN1-xTB (geometries, frequencies, and noncovalent interactions tight binding) Hamiltonian, we have investigated the structural, electronic, and magnetic properties of vacancy defects, hydrogen- and oxygen-passivated defects, and Fe adsorption in two-dimensional (2D) graphitic carbon nitride (gt-<span>\\\\(\\\\hbox {C}_{\\\\textrm{3}}\\\\)</span> <span>\\\\(\\\\hbox {N}_{\\\\textrm{4}}\\\\)</span>) 2D material. The ring shape is the most preferred vacancy evolution path, with significant stability of the semicircle fourfold C-N-C-N vacancy. We found that bare gt-<span>\\\\(\\\\hbox {C}_{\\\\textrm{3}}\\\\)</span> <span>\\\\(\\\\hbox {N}_{\\\\textrm{4}}\\\\)</span> which is nonmagnetic becomes magnetic by 2- and 5-defect creation, hydrogen/oxygen passivation of the defects, and upon Fe adsorption. Interestingly, Fe atoms interact with the gt-<span>\\\\(\\\\hbox {C}_{\\\\textrm{3}}\\\\)</span> <span>\\\\(\\\\hbox {N}_{\\\\textrm{4}}\\\\)</span> sheet and result in a ground ferromagnetic (FM) state. In addition, we investigate the effects of passivating the vacancies by hydrogen in gt-<span>\\\\(\\\\hbox {C}_{\\\\textrm{3}}\\\\)</span> <span>\\\\(\\\\hbox {N}_{\\\\textrm{4}}\\\\)</span> on its structural, electrical, and magnetic properties. We found that substituting the 1-, 2-, and 3-vacancies with hydrogen and passivating the 6-defect with oxygen turn on magnetism in the system. Due to structural distortion, the passivated defects do not have a well-ordered magnetic orientation. However, passivating the remaining defected structures maintains the nonmagnetic state. It is also shown that passivation leads to a semiconductor with a band gap value higher than that of the bare material. We also calculate the electronic and magnetic properties of transition metal (TM) atoms, including V-, Cr-, Mn-, Fe-, Co-, Ni-adsorbed gt-<span>\\\\(\\\\hbox {C}_{\\\\textrm{3}}\\\\)</span> <span>\\\\(\\\\hbox {N}_{\\\\textrm{4}}\\\\)</span> monolayer. All TM atoms show slight lattice distortion, and the adsorbed system almost maintains the original structure type. Moreover, a FM alignment was observed with total magnetic moments of 2.89 <span>\\\\(\\\\mu _{\\\\textrm{B}}\\\\)</span>, 2 <span>\\\\(\\\\mu _{\\\\textrm{B}}\\\\)</span>, and 1 <span>\\\\(\\\\mu _{\\\\textrm{B}}\\\\)</span> for V, Fe, and Co atoms, respectively. The Cr, Mn, and Ni atoms induce no magnetism to the nonmagnetic gt-<span>\\\\(\\\\hbox {C}_{\\\\textrm{3}}\\\\)</span> <span>\\\\(\\\\hbox {N}_{\\\\textrm{4}}\\\\)</span> system.</p></div>\",\"PeriodicalId\":645,\"journal\":{\"name\":\"Journal of Materials Science\",\"volume\":\"60 37\",\"pages\":\"16984 - 17000\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10853-025-11399-z\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10853-025-11399-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Unveiling the magnetic behavior of C3N4 2D material by defect creation, defect passivation, and transition metal adsorption
Using the density functional tight binding method (DFTB) and the GFN1-xTB (geometries, frequencies, and noncovalent interactions tight binding) Hamiltonian, we have investigated the structural, electronic, and magnetic properties of vacancy defects, hydrogen- and oxygen-passivated defects, and Fe adsorption in two-dimensional (2D) graphitic carbon nitride (gt-\(\hbox {C}_{\textrm{3}}\)\(\hbox {N}_{\textrm{4}}\)) 2D material. The ring shape is the most preferred vacancy evolution path, with significant stability of the semicircle fourfold C-N-C-N vacancy. We found that bare gt-\(\hbox {C}_{\textrm{3}}\)\(\hbox {N}_{\textrm{4}}\) which is nonmagnetic becomes magnetic by 2- and 5-defect creation, hydrogen/oxygen passivation of the defects, and upon Fe adsorption. Interestingly, Fe atoms interact with the gt-\(\hbox {C}_{\textrm{3}}\)\(\hbox {N}_{\textrm{4}}\) sheet and result in a ground ferromagnetic (FM) state. In addition, we investigate the effects of passivating the vacancies by hydrogen in gt-\(\hbox {C}_{\textrm{3}}\)\(\hbox {N}_{\textrm{4}}\) on its structural, electrical, and magnetic properties. We found that substituting the 1-, 2-, and 3-vacancies with hydrogen and passivating the 6-defect with oxygen turn on magnetism in the system. Due to structural distortion, the passivated defects do not have a well-ordered magnetic orientation. However, passivating the remaining defected structures maintains the nonmagnetic state. It is also shown that passivation leads to a semiconductor with a band gap value higher than that of the bare material. We also calculate the electronic and magnetic properties of transition metal (TM) atoms, including V-, Cr-, Mn-, Fe-, Co-, Ni-adsorbed gt-\(\hbox {C}_{\textrm{3}}\)\(\hbox {N}_{\textrm{4}}\) monolayer. All TM atoms show slight lattice distortion, and the adsorbed system almost maintains the original structure type. Moreover, a FM alignment was observed with total magnetic moments of 2.89 \(\mu _{\textrm{B}}\), 2 \(\mu _{\textrm{B}}\), and 1 \(\mu _{\textrm{B}}\) for V, Fe, and Co atoms, respectively. The Cr, Mn, and Ni atoms induce no magnetism to the nonmagnetic gt-\(\hbox {C}_{\textrm{3}}\)\(\hbox {N}_{\textrm{4}}\) system.
期刊介绍:
The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.