MOCVD生长AlN薄膜中蓝色和紫色发光的起源及少量Ga掺杂的影响。

IF 3.3 2区物理与天体物理 Q2 OPTICS

Optics express Pub Date : 2025-09-08 DOI:10.1364/OE.572935

Zhaolan Sun, Jing Yang, Yuheng Zhang, Zongshun Liu, Yufei Hou, Feng Liang, Bing Liu, Fu Zheng, Xuefeng Liu, Degang Zhao

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引用次数: 0

摘要

氮化铝（AlN）在短波长的光电器件中具有广阔的应用前景，引起了人们的广泛关注。然而，从mocvd生长的AlN薄膜中产生的不理想的蓝色和紫色发光阻碍了它们的发展。本研究通过实验研究了2.7 eV下的蓝色发光来源于VAl受体与深部供体之间的给受体对（DAP）跃迁，3.0eV下的紫色发光来源于Al(NOy)x配合物与导带或浅供体水平之间的跃迁。此外，在生长过程中，在AlN层中加入少量的Ga可以调节缺陷类型并抑制紫色发光。该研究对提高氮化铝基光电器件的性能具有重要意义。

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Origins of blue and violet luminescence in AlN films grown by MOCVD and the impact of a small amount of Ga doping.

Aluminum nitride (AlN) has attracted considerable attention for its promising applications in short-wavelength optoelectronic devices. However, undesirable blue and violet luminescence from MOCVD-grown AlN films has impeded their development. This study has experimentally investigated the blue luminescence at 2.7 eV originated from the donor-acceptor pair (DAP) transitions between V_Al acceptor and deep donors, and the violet luminescence at 3.0eVoriginated from the transitions between Al(NO_y)_x complex and conduction band or shallow donor level. Additionally, incorporating a small amount of Ga into the AlN layer during the growth can modulate the defect types and suppress violet luminescence. This study is crucial for improving the performance of AlN-based optoelectronic devices.

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来源期刊

Optics express 物理-光学

CiteScore

6.60

自引率

15.80%

发文量

5182

审稿时长

2.1 months

期刊介绍： Optics Express is the all-electronic, open access journal for optics providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and photonics.