基于原子层沉积InGaZnO薄膜的1-晶体管-1-二极管结构紫外光存储器的保留和运行机理分析

IF 4.2 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials Pub Date : 2025-09-20 DOI:10.1016/j.optmat.2025.117532

Jingxuan Wei , Jieru Song , Yongjie He , Rongxu Bai , Qing-Qing Sun

{"title":"基于原子层沉积InGaZnO薄膜的1-晶体管-1-二极管结构紫外光存储器的保留和运行机理分析","authors":"Jingxuan Wei , Jieru Song , Yongjie He , Rongxu Bai , Qing-Qing Sun","doi":"10.1016/j.optmat.2025.117532","DOIUrl":null,"url":null,"abstract":"<div><div>Indium–Gallium–Zinc Oxide (IGZO) is a starring semiconductor material with multiple device applications, including memory and photoelectronics. In 2020, the IGZO integration in capacitor-less dynamic random access memory (2T0C DRAM) founded a breakthrough innovation, where the gate capacitor of the IGZO thin film transistor (TFT) functioned as the storage node (SN). Inspired by this foundation, this study combines the photoelectric properties of IGZO with the 2T0C architecture to fabricate and characterize a 1-transistor-1-diode (1T1D) ultraviolet (UV) optical memory device. Based on the IGZO thin film synthesized via atomic layer deposition (ALD), systematic characterizations were performed to validate the photoelectric characteristics. Following the IGZO deposition, the 1T1D UV optical memory was fabricated, comprising a TFT and a photodiode. Photoelectric and electrical characterizations of both devices were conducted to confirm their availability for optical memory. Subsequent to the single device characterizations, retention and endurance characterizations were executed and evaluated by the defined parameters of optical retention time (<em>t</em><sub>OR</sub>) and optical response current (<em>I</em><sub>OR</sub>), with <em>t</em><sub>OR</sub> ranging from 171 s to 498 s and <em>I</em><sub>OR</sub> ranging from 14 nA to 45 nA with both fluctuations below 2 % in endurance characterizations. By modifying the light pulse parameters and circuit configurations, the impacts of wavelength, intensity, optical programming operation time and anode voltage on optical storage performance were comprehensively analyzed and elucidated. Finally, based on variations of read current during retention characterizations, the operation mechanism of the 1T1D UV optical memory was analyzed, and the operation process was categorized into four distinct stages.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"169 ","pages":"Article 117532"},"PeriodicalIF":4.2000,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1-Transistor-1-diode architecture UV optical memory based on the atomic layer deposition InGaZnO thin film with retention and operation mechanism analysis\",\"authors\":\"Jingxuan Wei , Jieru Song , Yongjie He , Rongxu Bai , Qing-Qing Sun\",\"doi\":\"10.1016/j.optmat.2025.117532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Indium–Gallium–Zinc Oxide (IGZO) is a starring semiconductor material with multiple device applications, including memory and photoelectronics. In 2020, the IGZO integration in capacitor-less dynamic random access memory (2T0C DRAM) founded a breakthrough innovation, where the gate capacitor of the IGZO thin film transistor (TFT) functioned as the storage node (SN). Inspired by this foundation, this study combines the photoelectric properties of IGZO with the 2T0C architecture to fabricate and characterize a 1-transistor-1-diode (1T1D) ultraviolet (UV) optical memory device. Based on the IGZO thin film synthesized via atomic layer deposition (ALD), systematic characterizations were performed to validate the photoelectric characteristics. Following the IGZO deposition, the 1T1D UV optical memory was fabricated, comprising a TFT and a photodiode. Photoelectric and electrical characterizations of both devices were conducted to confirm their availability for optical memory. Subsequent to the single device characterizations, retention and endurance characterizations were executed and evaluated by the defined parameters of optical retention time (<em>t</em><sub>OR</sub>) and optical response current (<em>I</em><sub>OR</sub>), with <em>t</em><sub>OR</sub> ranging from 171 s to 498 s and <em>I</em><sub>OR</sub> ranging from 14 nA to 45 nA with both fluctuations below 2 % in endurance characterizations. By modifying the light pulse parameters and circuit configurations, the impacts of wavelength, intensity, optical programming operation time and anode voltage on optical storage performance were comprehensively analyzed and elucidated. Finally, based on variations of read current during retention characterizations, the operation mechanism of the 1T1D UV optical memory was analyzed, and the operation process was categorized into four distinct stages.</div></div>\",\"PeriodicalId\":19564,\"journal\":{\"name\":\"Optical Materials\",\"volume\":\"169 \",\"pages\":\"Article 117532\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2025-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925346725008924\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346725008924","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

铟镓锌氧化物（IGZO）是一种重要的半导体材料，具有多种器件应用，包括存储器和光电子器件。2020年，IGZO集成在无电容动态随机存取存储器（2T0C DRAM）中开创了突破性创新，其中IGZO薄膜晶体管（TFT）的栅极电容器充当存储节点（SN）。在此基础上，本研究将IGZO的光电特性与2T0C架构相结合，制作并表征了1晶体管1二极管（1T1D）紫外光存储器件。基于原子层沉积（ALD）法制备的IGZO薄膜，对其光电特性进行了系统表征。在IGZO沉积之后，制作了由TFT和光电二极管组成的1T1D紫外光存储器。对这两种器件进行了光电和电学表征，以证实它们可用于光存储器。在单器件表征之后，通过定义的光保持时间（tOR）和光响应电流（IOR）参数进行保留和持久表征并进行评估，tOR范围为171 s至498 s， IOR范围为14 nA至45 nA，持久表征的波动均低于2%。通过改变光脉冲参数和电路配置，全面分析和阐明了波长、光强、光编程操作时间和阳极电压对光存储性能的影响。最后，基于保持表征过程中读电流的变化，分析了1T1D UV光存储器的工作机理，并将其工作过程分为四个不同的阶段。

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1-Transistor-1-diode architecture UV optical memory based on the atomic layer deposition InGaZnO thin film with retention and operation mechanism analysis

Indium–Gallium–Zinc Oxide (IGZO) is a starring semiconductor material with multiple device applications, including memory and photoelectronics. In 2020, the IGZO integration in capacitor-less dynamic random access memory (2T0C DRAM) founded a breakthrough innovation, where the gate capacitor of the IGZO thin film transistor (TFT) functioned as the storage node (SN). Inspired by this foundation, this study combines the photoelectric properties of IGZO with the 2T0C architecture to fabricate and characterize a 1-transistor-1-diode (1T1D) ultraviolet (UV) optical memory device. Based on the IGZO thin film synthesized via atomic layer deposition (ALD), systematic characterizations were performed to validate the photoelectric characteristics. Following the IGZO deposition, the 1T1D UV optical memory was fabricated, comprising a TFT and a photodiode. Photoelectric and electrical characterizations of both devices were conducted to confirm their availability for optical memory. Subsequent to the single device characterizations, retention and endurance characterizations were executed and evaluated by the defined parameters of optical retention time (t_OR) and optical response current (I_OR), with t_OR ranging from 171 s to 498 s and I_OR ranging from 14 nA to 45 nA with both fluctuations below 2 % in endurance characterizations. By modifying the light pulse parameters and circuit configurations, the impacts of wavelength, intensity, optical programming operation time and anode voltage on optical storage performance were comprehensively analyzed and elucidated. Finally, based on variations of read current during retention characterizations, the operation mechanism of the 1T1D UV optical memory was analyzed, and the operation process was categorized into four distinct stages.

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来源期刊

Optical Materials 工程技术-材料科学：综合

CiteScore

6.60

自引率

12.80%

发文量

1265

审稿时长

38 days

期刊介绍： Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.