Sanghyun You , Minuk Kim , Inkyoung Cho , Junyoung Kim , Sangheon Lee , Chang-Koo Kim
{"title":"使用具有低全球变暖潜势的七氟丙基甲基醚循环蚀刻SiO2接触孔","authors":"Sanghyun You , Minuk Kim , Inkyoung Cho , Junyoung Kim , Sangheon Lee , Chang-Koo Kim","doi":"10.1016/j.matdes.2025.114797","DOIUrl":null,"url":null,"abstract":"<div><div>SiO<sub>2</sub> contact holes having high aspect ratios were etched using a cyclic-etching process employing heptafluoropropyl methyl ether (HFE-347mcc3) which exhibits a low global-warming potential (GWP ≈530) compared with conventional perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs). In this cyclic process, the etching steps involving HFE-347mcc3/O<sub>2</sub>/Ar plasmas were alternated with deposition steps involving HFE-347mcc3/Ar plasmas to precisely control the fluorocarbon passivation films on the sidewalls. The effects of the deposition- and etching-step durations on the contact-hole profiles were systematically investigated. Increasing the duration of the deposition step initially improved sidewall protection, thereby significantly reducing bowing and enhancing anisotropy; however, excessively long deposition-step durations caused narrowing. Similarly, the duration of the etching step was optimized to achieve sufficient fluorocarbon-film hardening to prevent bowing while avoiding excessive narrowing. The degree of exposure to fluorocarbon plasma was introduced as a critical parameter to optimize the anisotropy. Under optimized conditions, a nearly vertical and highly anisotropic SiO<sub>2</sub> contact hole having a diameter of 100 nm and an aspect ratio of 24 was successfully obtained with minimal bowing (1 nm). The results revealed that HFE-347mcc3 is a viable and environmentally sustainable alternative to high-GWP PFCs or HFCs and provide both environmental benefits and excellent etching performance.</div></div>","PeriodicalId":383,"journal":{"name":"Materials & Design","volume":"259 ","pages":"Article 114797"},"PeriodicalIF":7.9000,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cyclic etching of SiO2 contact holes using heptafluoropropyl methyl ether having low global-warming potential\",\"authors\":\"Sanghyun You , Minuk Kim , Inkyoung Cho , Junyoung Kim , Sangheon Lee , Chang-Koo Kim\",\"doi\":\"10.1016/j.matdes.2025.114797\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>SiO<sub>2</sub> contact holes having high aspect ratios were etched using a cyclic-etching process employing heptafluoropropyl methyl ether (HFE-347mcc3) which exhibits a low global-warming potential (GWP ≈530) compared with conventional perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs). In this cyclic process, the etching steps involving HFE-347mcc3/O<sub>2</sub>/Ar plasmas were alternated with deposition steps involving HFE-347mcc3/Ar plasmas to precisely control the fluorocarbon passivation films on the sidewalls. The effects of the deposition- and etching-step durations on the contact-hole profiles were systematically investigated. Increasing the duration of the deposition step initially improved sidewall protection, thereby significantly reducing bowing and enhancing anisotropy; however, excessively long deposition-step durations caused narrowing. Similarly, the duration of the etching step was optimized to achieve sufficient fluorocarbon-film hardening to prevent bowing while avoiding excessive narrowing. The degree of exposure to fluorocarbon plasma was introduced as a critical parameter to optimize the anisotropy. Under optimized conditions, a nearly vertical and highly anisotropic SiO<sub>2</sub> contact hole having a diameter of 100 nm and an aspect ratio of 24 was successfully obtained with minimal bowing (1 nm). The results revealed that HFE-347mcc3 is a viable and environmentally sustainable alternative to high-GWP PFCs or HFCs and provide both environmental benefits and excellent etching performance.</div></div>\",\"PeriodicalId\":383,\"journal\":{\"name\":\"Materials & Design\",\"volume\":\"259 \",\"pages\":\"Article 114797\"},\"PeriodicalIF\":7.9000,\"publicationDate\":\"2025-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials & Design\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0264127525012171\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials & Design","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0264127525012171","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Cyclic etching of SiO2 contact holes using heptafluoropropyl methyl ether having low global-warming potential
SiO2 contact holes having high aspect ratios were etched using a cyclic-etching process employing heptafluoropropyl methyl ether (HFE-347mcc3) which exhibits a low global-warming potential (GWP ≈530) compared with conventional perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs). In this cyclic process, the etching steps involving HFE-347mcc3/O2/Ar plasmas were alternated with deposition steps involving HFE-347mcc3/Ar plasmas to precisely control the fluorocarbon passivation films on the sidewalls. The effects of the deposition- and etching-step durations on the contact-hole profiles were systematically investigated. Increasing the duration of the deposition step initially improved sidewall protection, thereby significantly reducing bowing and enhancing anisotropy; however, excessively long deposition-step durations caused narrowing. Similarly, the duration of the etching step was optimized to achieve sufficient fluorocarbon-film hardening to prevent bowing while avoiding excessive narrowing. The degree of exposure to fluorocarbon plasma was introduced as a critical parameter to optimize the anisotropy. Under optimized conditions, a nearly vertical and highly anisotropic SiO2 contact hole having a diameter of 100 nm and an aspect ratio of 24 was successfully obtained with minimal bowing (1 nm). The results revealed that HFE-347mcc3 is a viable and environmentally sustainable alternative to high-GWP PFCs or HFCs and provide both environmental benefits and excellent etching performance.
期刊介绍:
Materials and Design is a multi-disciplinary journal that publishes original research reports, review articles, and express communications. The journal focuses on studying the structure and properties of inorganic and organic materials, advancements in synthesis, processing, characterization, and testing, the design of materials and engineering systems, and their applications in technology. It aims to bring together various aspects of materials science, engineering, physics, and chemistry.
The journal explores themes ranging from materials to design and aims to reveal the connections between natural and artificial materials, as well as experiment and modeling. Manuscripts submitted to Materials and Design should contain elements of discovery and surprise, as they often contribute new insights into the architecture and function of matter.