InGaN/GaN多量子盘发光二极管异质结构中局部合金波动的光谱特征及其对光学性能的影响

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence Pub Date : 2025-09-19 DOI:10.1016/j.jlumin.2025.121561

Soumyadip Chatterjee , Subhranshu Sekhar Sahu , Kanchan Singh Rana , Swagata Bhunia , Dipankar Saha , Apurba Laha

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引用次数: 0

摘要

研究了等离子体辅助分子束外延（PAMBE）生长的三组InGaN/GaN多量子盘发光二极管（LED）结构在不同工艺条件下的载流子非均匀化定位。对发光峰位置的温度依赖性研究表明，在一定工艺条件下制备的样品显示出局域态载流子的热分布，在发光特性上表现出典型的“S”形依赖性。在另一个相对较高的流入通量制备的样品中没有S形性质，这表明合金成分具有较好的均匀性。进一步的研究表明，“S”形性质不存在的样品具有优越的光学性质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Spectroscopic signature of local alloy fluctuations in InGaN/GaN multi-quantum-disk light emitting diode heterostructures and its impact on the optical performance

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Spectroscopic signature of local alloy fluctuations in InGaN/GaN multi-quantum-disk light emitting diode heterostructures and its impact on the optical performance

Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) under different process conditions. A temperature-dependent study of the luminescence peak positions reveals that samples prepared under certain process conditions exhibit a thermal distribution of carriers from the localized states that show the typical ‘S’ shaped dependence in luminescence characteristics. The absence of an ‘S’ shaped nature in the other sample prepared with relatively higher In-flux infers a superior homogeneity in alloy composition. Further investigation manifested superior optical properties for the samples where the ‘S’ shape nature is absent.

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来源期刊

Journal of Luminescence 物理-光学

CiteScore

6.70

自引率

13.90%

发文量

850

审稿时长

3.8 months

期刊介绍： The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid. We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.