利用接触掺杂技术抑制单极势垒LWIR探测器中的隧穿暗电流

IF 3.4 3区物理与天体物理 Q2 INSTRUMENTS & INSTRUMENTATION

Infrared Physics & Technology Pub Date : 2025-09-20 DOI:10.1016/j.infrared.2025.106160

Yuhao Chen , Jing Yu , Lidan Lu , Zhenfei Xing , Rong Yan , Weiqiang Chen , Mingli Dong , Jianzhen Ou , Lianqing Zhu

{"title":"利用接触掺杂技术抑制单极势垒LWIR探测器中的隧穿暗电流","authors":"Yuhao Chen , Jing Yu , Lidan Lu , Zhenfei Xing , Rong Yan , Weiqiang Chen , Mingli Dong , Jianzhen Ou , Lianqing Zhu","doi":"10.1016/j.infrared.2025.106160","DOIUrl":null,"url":null,"abstract":"<div><div>Suppressing tunneling dark current in nBn-type long-wavelength infrared (LWIR) detectors operating under cryogenic conditions has been a continuous challenge. This study proposes an n-contact doping strategy of InAs/GaSb superlattice-based devices to modulate electron accumulation and the interfacial electric field distribution. As a result, the differential resistance increased by an order of magnitude, while a stable turn-on voltage (300 mV) and broadband spectral response (1–11 μm) were maintained. The influence of n-contact doping on the tunneling mechanism (Ea ≈ 0 meV) was evaluated over the 33–90 K temperature range using Arrhenius fitting. This work presents a novel approach to resolving the inherent trade-off between barrier thickness and tunneling dark current density in unipolar barrier structures, thereby contributing to the development of third-generation, high-sensitivity infrared focal plane arrays.</div></div>","PeriodicalId":13549,"journal":{"name":"Infrared Physics & Technology","volume":"151 ","pages":"Article 106160"},"PeriodicalIF":3.4000,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Suppression of tunneling dark current in unipolar barrier LWIR detectors via contact doping engineering\",\"authors\":\"Yuhao Chen , Jing Yu , Lidan Lu , Zhenfei Xing , Rong Yan , Weiqiang Chen , Mingli Dong , Jianzhen Ou , Lianqing Zhu\",\"doi\":\"10.1016/j.infrared.2025.106160\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Suppressing tunneling dark current in nBn-type long-wavelength infrared (LWIR) detectors operating under cryogenic conditions has been a continuous challenge. This study proposes an n-contact doping strategy of InAs/GaSb superlattice-based devices to modulate electron accumulation and the interfacial electric field distribution. As a result, the differential resistance increased by an order of magnitude, while a stable turn-on voltage (300 mV) and broadband spectral response (1–11 μm) were maintained. The influence of n-contact doping on the tunneling mechanism (Ea ≈ 0 meV) was evaluated over the 33–90 K temperature range using Arrhenius fitting. This work presents a novel approach to resolving the inherent trade-off between barrier thickness and tunneling dark current density in unipolar barrier structures, thereby contributing to the development of third-generation, high-sensitivity infrared focal plane arrays.</div></div>\",\"PeriodicalId\":13549,\"journal\":{\"name\":\"Infrared Physics & Technology\",\"volume\":\"151 \",\"pages\":\"Article 106160\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared Physics & Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1350449525004530\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Physics & Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1350449525004530","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}

引用次数: 0

摘要

在低温条件下工作的nbn型长波红外（LWIR）探测器中抑制隧穿暗电流一直是一个挑战。本研究提出了一种基于InAs/GaSb超晶格器件的n接触掺杂策略来调节电子积累和界面电场分布。结果，差分电阻增加了一个数量级，同时保持了稳定的导通电压（300 mV）和宽带频谱响应（1 ~ 11 μm）。在33 ~ 90 K温度范围内，利用Arrhenius拟合评价了n-接触掺杂对隧穿机制（Ea≈0 meV）的影响。这项工作提出了一种解决单极势垒结构中势垒厚度和隧穿暗电流密度之间固有权衡的新方法，从而有助于第三代高灵敏度红外焦平面阵列的发展。

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Suppression of tunneling dark current in unipolar barrier LWIR detectors via contact doping engineering

Suppressing tunneling dark current in nBn-type long-wavelength infrared (LWIR) detectors operating under cryogenic conditions has been a continuous challenge. This study proposes an n-contact doping strategy of InAs/GaSb superlattice-based devices to modulate electron accumulation and the interfacial electric field distribution. As a result, the differential resistance increased by an order of magnitude, while a stable turn-on voltage (300 mV) and broadband spectral response (1–11 μm) were maintained. The influence of n-contact doping on the tunneling mechanism (Ea ≈ 0 meV) was evaluated over the 33–90 K temperature range using Arrhenius fitting. This work presents a novel approach to resolving the inherent trade-off between barrier thickness and tunneling dark current density in unipolar barrier structures, thereby contributing to the development of third-generation, high-sensitivity infrared focal plane arrays.

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来源期刊

Infrared Physics & Technology 物理-光学

CiteScore

5.70

自引率

12.10%

发文量

400

审稿时长

67 days

期刊介绍： The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region. Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine. Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.