具有接触分离摩擦电纳米发电机功能的PDMS/PTFE电荷捕获层的微观结构和机理

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Wei-Lin Wu, , , Cheng-Yu Shih, , , Wan-Jhen Wu, , and , Fu-Hsiang Ko*, 
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引用次数: 0

摘要

用于机械能量收集的摩擦纳米发电机(TENGs)被认为是实现清洁能源和自供电传感系统的候选材料。然而,摩擦层中由摩擦电荷复合引起的电荷衰减问题是复杂的,目前尚不清楚。这种现象通过电荷衰减和能量损失降低了表面电荷密度,从而限制了teng的整体电学性能。本研究提出了一种高摩擦电荷密度和低电荷耗散的复合结构摩擦电纳米发电机(CS-TENG)。CS-TENG由微金字塔阵列表面和电荷存储层组成,这使得表面摩擦电荷更高,并且减少了由内置电位引起的电荷衰减。为了提高器件性能,采用聚二甲基硅氧烷(PDMS)设计合适的金字塔结构,实现表面功能化,扩大有效表面积。通过插入聚四氟乙烯(PTFE),获得了低复合率的电荷存储层。此外,电荷存储层的厚度控制着CS-TENG的输出电压和电流。在本研究中,提出了一种表面金字塔结构,结合低复合率和适当厚度的电荷捕获层,以解决发电的限制。作为应用,70 μm厚的CS-TENG可产生21.99 V/cm2的开路电压和2.57 μA/cm2的短路电流,并能成功点亮50个发光二极管(led)。此外,该器件在2000个周期内的开路电压和短路电流方面表现出极大的稳定性。本研究展示了表面功能的实现和电荷存储层的插入,以提高基于pdm的TENG的输出性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructure and Mechanism of a PDMS/PTFE Charge-Trapping Layer with Functionality for Contact-Separation Triboelectric Nanogenerators

Triboelectric nanogenerators (TENGs) for mechanical energy harvesting are considered to be candidate materials for realizing clean energy and self-powered sensing systems. However, the issue of charge decay in the friction layer caused by the recombination of triboelectric charges is complex and still unclear. This phenomenon reduces the surface charge density through charge decay and energy loss, which limits the overall electrical performance of TENGs. In this study, a composite structure triboelectric nanogenerator (CS-TENG) that is designed to achieve a high triboelectric charge density and low charge dissipation is proposed. The CS-TENG consists of a micropyramid-array surface and a charge storage layer, which enables a higher surface triboelectric charge and reduced charge decay induced by the built-in potential. To increase the device performance, surface functionality was realized to expand the effective surface area through the design of a suitable pyramid structure by using polydimethylsiloxane (PDMS). By inserting polytetrafluoroethylene (PTFE), a charge storage layer with a low recombination rate was obtained. Moreover, the charge storage layer thickness controlled the output voltage and current of the CS-TENG. In this study, a surface pyramid structure combined with a charge-trapping layer with a low recombination rate and an appropriate thickness is proposed to address power generation limitations. As an application, a 70 μm thick CS-TENG was demonstrated to generate a remarkable open-circuit voltage of 21.99 V/cm2 and a short-circuit current of 2.57 μA/cm2 and to successfully light up 50 light-emitting diodes (LEDs). Additionally, the device exhibited great stability in terms of the open-circuit voltage and short-circuit current throughout 2000 cycles. This study demonstrates both the realization of surface functionality and the insertion of a charge storage layer to enhance the output performance of a PDMS-based TENG.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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