SmFeAsO的向列阶电压感应滞回电阻

IF 13.7 Q1 CHEMISTRY, MULTIDISCIPLINARY
Zhiyue Li, Wanshun Du, Lingzhe Liao, Ziqing Sun, Zhuorui Zhang, Tianyue Wen, Zhekai Zhang, Wei Tao, Tingyong Chen
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引用次数: 0

摘要

利用点接触光谱法研究了“1111”铁超导体的母体化合物SmFeAsO。偏置电压通过弹道焦耳热效应通过反铁磁和结构转变驱动点接触。令人惊讶的是,偏置电压也只在向列数量级的温度范围内引起滞后电导,而在温度相关电阻中则没有这种行为。最大偏置电压越大,磁滞的电导变化越大,但总是只在向列阶区。电压驱动的电导迟滞不受5t磁场的影响,表明SmFeAsO样品中的向列序可能来自电子来源,可以由电压控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Voltage-Induced Hysteretic Resistance in Nematic Order of SmFeAsO

Voltage-Induced Hysteretic Resistance in Nematic Order of SmFeAsO

Point-contact spectroscopy has been utilized to study SmFeAsO, the parent compound of the “1111” iron superconductors. A bias voltage drives the point contact through antiferromagnetic and structural transitions via the ballistic Joule heating effect. Surprisingly, the bias voltage also induces a hysteretic conductance only in the temperature range of the nematic order, while there is no such behavior in the temperature-dependent resistance. The larger the maximum bias voltage, the bigger the conductance changes in the hysteresis, but always exclusively in the nematic order regime. The voltage-driven conductance hysteresis, which is not affected by a magnetic field of 5 T, suggests the nematic order in the SmFeAsO sample may be from an electronic origin and can be controlled by a voltage.

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CiteScore
17.40
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