基于磁畴壁运动检测的局部波动周期测量新方法

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-09-12 DOI:10.1016/j.sna.2025.117057

Daniil O. Samsonov , Nikita S. Klochkov , Sergey V. Goncharov , Abdulkarim A. Amirov , Aleksei S. Komlev

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引用次数: 0

摘要

传统的磁测量扫描方法在空间分辨率和对磁场不均匀性的敏感性方面存在局限性，降低了其在高精度测量中的有效性。我们提出的方法能够精确定位在波动器间隙中磁感应横向分量变为零的区域。一种基于检测铁磁板畴壁位移的新方法。确定接近零场值的区域对于评估波动周期长度和检测影响辐射光谱特性的不均匀性至关重要。对该方法进行了理论灵敏度分析，然后在具有哈尔巴赫结构的钕铁硼磁体的模型波动器上进行了实验验证。结果与传统霍尔探头测量结果进行了比较，证明了该方法的有效性。此外，我们还讨论了潜在的进展，例如采用具有高畴壁迁移率的铁磁材料来进一步提高性能。

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A novel method for local undulator period measurement via magnetic domain wall motion detection

Traditional scanning methods for magnetic measurements are limited in spatial resolution and sensitivity to magnetic field inhomogeneities, which reduces their effectiveness in high-precision measurements. We proposed the method, which enables precise localization of regions where the transverse component of magnetic induction becomes zero in the undulator gap. A new method based on the detection of the displacement of a domain wall in a ferromagnetic plate. Determining regions with near zero field value is critical for evaluating the undulator period length and detecting inhomogeneities that influence radiation spectral characteristics. A theoretical sensitivity analysis of the method was performed, followed by experimental validation on a model undulator with NdFeB magnets arranged in a Halbach configuration. The results were compared with conventional Hall probe measurements, demonstrating the method’s effectiveness. Additionally, we discuss potential advancements, such as employing ferromagnetic materials with high domain wall mobility to further enhance performance.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...