基于多波段太赫兹吸收体的折射率传感器

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Akash Kumar Gupta, Vikram Maurya, Sarthak Singhal
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引用次数: 0

摘要

本文提出了一种用于折射率传感的基于超材料的多波段太赫兹(THz)吸收体。其晶胞尺寸为10 × 10 × 1.61 μm3。它在03.33、06.332、11.614、20.012、21.076、25.598、28.296、32.514、35.82和38.442THz处有10个峰,吸收值分别为97.29%、96.70%、95.47%、98.63%、99.95%、97.97%、96.91%、96.40%、96.11%和99.63%,耦合在FWHM值为0.331、0.596、1.158、2.434、4.875、1.560和4.914THz的7个波段上。它准偏振不敏感。当入射角变化达400度时,其A≥80%的性能稳定。它具有体积减小达99.8%、A≥95%的峰有10个、FWHM波段7个等优点。它的六个峰折射率传感配置的灵敏度变化范围从~ 0.27 thz /RIU到3.67THz/RIU, FOM变化范围从0到16 RIU−1,质量因子变化范围在~ 0.27 ~ ~ 212。该传感器可以近似未知材料的折射率,误差小于0.3%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Multiband terahertz absorber based refractive index sensor

Multiband terahertz absorber based refractive index sensor
This paper presents a metamaterial-based multiband Terahertz (THz) absorber for Refractive Index sensing applications. Its unit cell dimensions are 10 × 10 × 1.61 μm3. It has 10 peaks at 03.33, 06.332, 11.614, 20.012, 21.076, 25.598, 28.296, 32.514, 35.82, and 38.442THz with absorption values of 97.29 %, 96.70 %, 95.47 %, 98.63 %, 99.95 %, 97.97 %, 96.91 %, 96.40 %, 96.11 %, and 99.63 % respectively coupled into seven bands having FWHM values of 0.331, 0.596, 1.158, 2.434, 4.875, 1.560, and 4.914THz. It is quasi-polarization insensitive. Its A ≥ 80 % performance is stable for incident angle variations upto 40o. It has merits of volume reduction upto 99.8 %, ten peaks with A ≥ 95 %, and seven FWHM bands. Its six peak refractive index sensing configurations has a sensitivity variation from ∼0.27THz/RIU to 3.67THz/RIU with FOM varying from 0 to 16 RIU−1and quality factor variations in the range of ∼0.27 - ∼212. This sensor can approximate the refractive index of unknown materials with an error of less than 0.3 %.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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