{"title":"高宽高比，超导真空间隙电容器NEMS，板距低至32纳米","authors":"Ioan Ignat, Daniel Platz, Ulrich Schmid","doi":"10.1002/admt.202401909","DOIUrl":null,"url":null,"abstract":"<p>Fabrication of aluminium vacuum gap capacitor based nano electromechanical systems (NEMS) is investigated, where the bottom electrode is fixed, and the top electrode is free to move. To avoid collapse of the top electrode, simultaneous oxidation of both sides of the top electrodes is ensured by the deposition of silicon protection layer without breaking vacuum, intended to be removed with the release process of the membrane with XeF<sub>2</sub> gas. Furthermore, the vertical stress gradient is controlled by optimizing the sputter deposition parameters for the aluminium top electrode to 50 W and 3 µbar for 100 nm. These techniques resulted in wafer-level high-yield fabrication of capacitors with radii between <span></span><math>\n <semantics>\n <mrow>\n <mn>7</mn>\n <mspace></mspace>\n <mi>μ</mi>\n <mi>m</mi>\n </mrow>\n <annotation>$7 \\,{\\umu }\\mathrm{m}$</annotation>\n </semantics></math> and <span></span><math>\n <semantics>\n <mrow>\n <mn>30</mn>\n <mspace></mspace>\n <mi>μ</mi>\n <mi>m</mi>\n </mrow>\n <annotation>$30 \\,{\\umu }\\mathrm{m}$</annotation>\n </semantics></math>. A cryostat at 400 mK and an integrated piezoactuator are used to prove electromechanical coupling.</p>","PeriodicalId":7292,"journal":{"name":"Advanced Materials Technologies","volume":"10 18","pages":""},"PeriodicalIF":6.4000,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admt.202401909","citationCount":"0","resultStr":"{\"title\":\"High Aspect Ratio, Superconducting Vacuum Gap Capacitor NEMS with Plate Distances Down to 32 nm\",\"authors\":\"Ioan Ignat, Daniel Platz, Ulrich Schmid\",\"doi\":\"10.1002/admt.202401909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Fabrication of aluminium vacuum gap capacitor based nano electromechanical systems (NEMS) is investigated, where the bottom electrode is fixed, and the top electrode is free to move. To avoid collapse of the top electrode, simultaneous oxidation of both sides of the top electrodes is ensured by the deposition of silicon protection layer without breaking vacuum, intended to be removed with the release process of the membrane with XeF<sub>2</sub> gas. Furthermore, the vertical stress gradient is controlled by optimizing the sputter deposition parameters for the aluminium top electrode to 50 W and 3 µbar for 100 nm. These techniques resulted in wafer-level high-yield fabrication of capacitors with radii between <span></span><math>\\n <semantics>\\n <mrow>\\n <mn>7</mn>\\n <mspace></mspace>\\n <mi>μ</mi>\\n <mi>m</mi>\\n </mrow>\\n <annotation>$7 \\\\,{\\\\umu }\\\\mathrm{m}$</annotation>\\n </semantics></math> and <span></span><math>\\n <semantics>\\n <mrow>\\n <mn>30</mn>\\n <mspace></mspace>\\n <mi>μ</mi>\\n <mi>m</mi>\\n </mrow>\\n <annotation>$30 \\\\,{\\\\umu }\\\\mathrm{m}$</annotation>\\n </semantics></math>. A cryostat at 400 mK and an integrated piezoactuator are used to prove electromechanical coupling.</p>\",\"PeriodicalId\":7292,\"journal\":{\"name\":\"Advanced Materials Technologies\",\"volume\":\"10 18\",\"pages\":\"\"},\"PeriodicalIF\":6.4000,\"publicationDate\":\"2025-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admt.202401909\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Technologies\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/admt.202401909\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Technologies","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/admt.202401909","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
研究了下电极固定、上电极自由移动的铝真空间隙电容纳米机电系统（NEMS）的制备方法。为了避免顶电极坍塌，在不破坏真空的情况下沉积硅保护层，保证顶电极两侧同时氧化，并随着膜的释放过程用XeF2气体去除。此外，通过将铝顶电极溅射沉积参数优化到50 W和3µbar，以控制垂直应力梯度。这些技术导致了圆片级高产量电容器的制造半径在7 μ m $7 \,{\umu}\ mathm {m}$和30 μ m $30 \,{\umu}\ mathm {m}$之间。使用400 mK低温恒温器和集成压电致动器来验证机电耦合。
High Aspect Ratio, Superconducting Vacuum Gap Capacitor NEMS with Plate Distances Down to 32 nm
Fabrication of aluminium vacuum gap capacitor based nano electromechanical systems (NEMS) is investigated, where the bottom electrode is fixed, and the top electrode is free to move. To avoid collapse of the top electrode, simultaneous oxidation of both sides of the top electrodes is ensured by the deposition of silicon protection layer without breaking vacuum, intended to be removed with the release process of the membrane with XeF2 gas. Furthermore, the vertical stress gradient is controlled by optimizing the sputter deposition parameters for the aluminium top electrode to 50 W and 3 µbar for 100 nm. These techniques resulted in wafer-level high-yield fabrication of capacitors with radii between and . A cryostat at 400 mK and an integrated piezoactuator are used to prove electromechanical coupling.
期刊介绍：
Advanced Materials Technologies Advanced Materials Technologies is the new home for all technology-related materials applications research, with particular focus on advanced device design, fabrication and integration, as well as new technologies based on novel materials. It bridges the gap between fundamental laboratory research and industry.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
