4H–SiC trench MOSFET with deep P-well using channeling implantation

In this paper, we proposed and fabricated 1.2 kV 4H–SiC trench MOSFET which features a deep P-well region formed by channeling implantation. In order to achieve high breakdown voltage with low leakage current, parameters of deep P-well region are comprehensively designed. Although the chip area of the proposed device is much smaller, the on-resistance and the avalanche energy of the proposed device are superior to that of Double Trench MOSFET and Asymmetric Trench MOSFET. The proposed device with a breakdown voltage of 1440 V and a specific on-resistance of 2.14 mΩ cm² demonstrates the feasibility of fabricating SiC trench MOSFET with the help of channeling implantation. The superior figure of merit and avalanche robustness make the proposed device a competitive candidate for commercial production.