{"title":"TM(V, Ti, Ni)@GaN膜用于变压器油溶气检测的气敏性能:DFT研究","authors":"Tianyan Jiang, Hao Chen, Sheng Xu, Yangxin You, Yang He, Xiaofeng Peng, Qiping Shen","doi":"10.1016/j.micrna.2025.208352","DOIUrl":null,"url":null,"abstract":"<div><div>This study systematically investigates the gas-sensing performance of transition-metal-doped GaN monolayers (TM = V, Ti, Ni) toward five typical dissolved gases in transformer oil (CO, H<sub>2</sub>, CH<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>, C<sub>2</sub>H<sub>4</sub>) using first-principles density functional theory (DFT). Adsorption energy, charge transfer, electronic structure modulation, recovery time, and work function sensitivity were comprehensively analyzed. Results show that TM doping significantly enhances the interaction strength and electronic response of GaN, with Ti@GaN exhibiting the most favorable stability and sensitivity. Specifically, Ti@GaN demonstrates the highest work function sensitivity to H<sub>2</sub> (34.19 %) and C<sub>2</sub>H<sub>2</sub> (21.57 %), strong adsorption energies for CO (−2.27 eV), C<sub>2</sub>H<sub>2</sub> (−2.89 eV), and C<sub>2</sub>H<sub>4</sub> (−2.09 eV), and rapid recovery characteristics (0.576 s for CO at 500 K). Moreover, competitive adsorption analysis reveals robust selectivity, with H<sub>2</sub> and C<sub>2</sub>H<sub>2</sub> effectively blocking interference from CO and CH<sub>4</sub>. These results identify Ti@GaN as the most promising candidate for fabricating high-performance sensors dedicated to transformer fault gas detection.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208352"},"PeriodicalIF":3.0000,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gas-sensing performance of TM(V, Ti, Ni)@GaN monolayers for transformer oil dissolved gas detection: A DFT study\",\"authors\":\"Tianyan Jiang, Hao Chen, Sheng Xu, Yangxin You, Yang He, Xiaofeng Peng, Qiping Shen\",\"doi\":\"10.1016/j.micrna.2025.208352\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study systematically investigates the gas-sensing performance of transition-metal-doped GaN monolayers (TM = V, Ti, Ni) toward five typical dissolved gases in transformer oil (CO, H<sub>2</sub>, CH<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>, C<sub>2</sub>H<sub>4</sub>) using first-principles density functional theory (DFT). Adsorption energy, charge transfer, electronic structure modulation, recovery time, and work function sensitivity were comprehensively analyzed. Results show that TM doping significantly enhances the interaction strength and electronic response of GaN, with Ti@GaN exhibiting the most favorable stability and sensitivity. Specifically, Ti@GaN demonstrates the highest work function sensitivity to H<sub>2</sub> (34.19 %) and C<sub>2</sub>H<sub>2</sub> (21.57 %), strong adsorption energies for CO (−2.27 eV), C<sub>2</sub>H<sub>2</sub> (−2.89 eV), and C<sub>2</sub>H<sub>4</sub> (−2.09 eV), and rapid recovery characteristics (0.576 s for CO at 500 K). Moreover, competitive adsorption analysis reveals robust selectivity, with H<sub>2</sub> and C<sub>2</sub>H<sub>2</sub> effectively blocking interference from CO and CH<sub>4</sub>. These results identify Ti@GaN as the most promising candidate for fabricating high-performance sensors dedicated to transformer fault gas detection.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"208 \",\"pages\":\"Article 208352\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S277301232500281X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S277301232500281X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Gas-sensing performance of TM(V, Ti, Ni)@GaN monolayers for transformer oil dissolved gas detection: A DFT study
This study systematically investigates the gas-sensing performance of transition-metal-doped GaN monolayers (TM = V, Ti, Ni) toward five typical dissolved gases in transformer oil (CO, H2, CH4, C2H2, C2H4) using first-principles density functional theory (DFT). Adsorption energy, charge transfer, electronic structure modulation, recovery time, and work function sensitivity were comprehensively analyzed. Results show that TM doping significantly enhances the interaction strength and electronic response of GaN, with Ti@GaN exhibiting the most favorable stability and sensitivity. Specifically, Ti@GaN demonstrates the highest work function sensitivity to H2 (34.19 %) and C2H2 (21.57 %), strong adsorption energies for CO (−2.27 eV), C2H2 (−2.89 eV), and C2H4 (−2.09 eV), and rapid recovery characteristics (0.576 s for CO at 500 K). Moreover, competitive adsorption analysis reveals robust selectivity, with H2 and C2H2 effectively blocking interference from CO and CH4. These results identify Ti@GaN as the most promising candidate for fabricating high-performance sensors dedicated to transformer fault gas detection.