增强型热电发电机用ITO/Cu2SnS3薄膜的制备与表征

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mohammed Bousseta , Abdelaziz Tchenka , Lahoucine Amiri , Abdelfattah Narjis , Lahcen Nkhaili , Abdelkader Outzourhit
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引用次数: 0

摘要

本研究探索了基于溅射沉积Cu2SnS3 (CTS)和氧化铟锡(ITO)薄膜的P-N结热电发生器,用于高效废热转换。CTS薄膜在300 W射频功率下高真空沉积,500℃退火,ITO薄膜在200 W射频功率下沉积。x射线衍射证实CTS为单斜相,无二次相。进行了光学和电学表征,包括UV-Vis-NIR光谱,带隙和I-V测量。塞贝克系数随温度升高而增大。Seebeck系数随温度的升高而增大,随载流子浓度的增加而减小,符合Pisarenko关系。估计了NC态的有效密度和能量差(Ec-EF)。CTS的有效质量比(m*/me)为0.5,ITO的有效质量比为0.35,表明有利于热电效率的态密度。CTS/ITO P-N结显示出可测量的开路电压、短路电流和功率输出,证实了其在微尺度热电发电机应用中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and characterization of ITO/Cu2SnS3 thin films for enhanced thermoelectric generators
This study explores P-N junction thermoelectric generators based on sputter-deposited Cu2SnS3 (CTS) and indium tin oxide (ITO) thin films for efficient waste heat conversion. CTS films were deposited at 300 W RF power under high vacuum and annealed at 500 °C, while ITO films were deposited at 200 W. X-ray diffraction confirmed the monoclinic phase of CTS with no secondary phases. Optical and electrical characterizations were carried out, including UV–Vis-NIR spectroscopy, bandgap, and I-V measurements. The Seebeck coefficient increased with temperature. The Seebeck coefficient increases with temperature and decreases with carrier concentration, following the Pisarenko relation. The effective density of states NC and the energy difference (Ec-EF) were estimated. Effective mass ratios (m*/me) of 0.5 for CTS and 0.35 for ITO indicate a density of states favorable to thermoelectric efficiency. The CTS/ITO P-N junction showed measurable open-circuit voltage, short-circuit current, and power output, confirming its potential for micro-scale thermoelectric generator applications.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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