Ni3(Al1-xVx)三元合金的相稳定性和力学性能:第一性原理研究

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Peng Guangwei, Zhan Ting, Wei Xiang, Xia Jingyao
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引用次数: 0

摘要

采用第一性原理计算方法研究了含L12和D022的Ni3(Al1-xVx)(0≤x≤1)合金。结果表明,Al/V原子在Ni3(Al,V)中进行振幅调制分解,使晶格畸变最小化,并使相变成为可能。当0≤x≤0.625时,L12的生成焓和混合焓均低于D022,在x = 0.5时,L12的混合焓最低,为0.58 kJ/mol,具有较好的热稳定性。L12的费米能级在x = 0.5时表现出最小态密度(DOS)的伪带隙,而其高频声子DOS分布增强了稳定性。力学性能方面,L12-Ni3(Al0.5V0.5)具有最佳的硬度(12.32 GPa)和断裂韧性(21.96 MPa m1/2),优于其他成分。这些发现与文献中的实验力学性能和相图一致,揭示了稳定性和性能背后的原子/电子机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase stability and mechanical properties of Ni3(Al1-xVx) ternary alloys: First principles study
This study investigates Ni3(Al1-xVx) (0 ≤ x ≤ 1)alloys with L12 and D022 via first-principles calculations. Results show Al/V atoms undergo amplitude modulation decomposition in Ni3(Al,V), minimizing lattice distortion and enabling phase transitions. For 0 ≤ x ≤ 0.625, L12 exhibits lower formation and mixing enthalpies than D022, with the lowest mixing enthalpy (0.58 kJ/mol) at x = 0.5, confirming superior thermal stability. L12's Fermi level displays a pseudo-bandgap with minimal density of states (DOS) at x = 0.5, while its high-frequency phonon DOS distribution enhances stability. Mechanically, L12-Ni3(Al0.5V0.5) achieves optimal hardness (12.32 GPa) and fracture toughness (21.96 MPa m1/2), outperforming other compositions. These findings consistent with experimental mechanical properties and phase diagrams in literatures, revealing atomic/electronic mechanisms behind stability and performance.
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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