Noiba U. Botirova*, Azamat O. Arslanov, Gofur B. Eshonkulov, Jamoliddin X. Murodov, Ra’no Sh. Sharipova, Javohir Sh. Khudoykulov and Shavkat U. Yuldashev,
{"title":"SiO2和退火后Ga2O3缓冲层对Ga2O3薄膜生长和性能的影响","authors":"Noiba U. Botirova*, Azamat O. Arslanov, Gofur B. Eshonkulov, Jamoliddin X. Murodov, Ra’no Sh. Sharipova, Javohir Sh. Khudoykulov and Shavkat U. Yuldashev, ","doi":"10.1021/acs.cgd.5c01075","DOIUrl":null,"url":null,"abstract":"<p >This study explores the impact of SiO<sub>2</sub> and β-Ga<sub>2</sub>O<sub>3</sub> buffer layers on the synthesis and properties of β-Ga<sub>2</sub>O<sub>3</sub> thin films deposited on n-type Si (100) substrates via sol–gel spin coating. Structural, morphological, and optical properties were characterized using X-ray diffraction, scanning electron microscopy, and UV–vis spectroscopy. Films on β-Ga<sub>2</sub>O<sub>3</sub> buffers exhibit significantly enhanced crystallinity, reduced lattice strain, and lower defect density compared to SiO<sub>2</sub>/Si and direct Si substrates. Morphological analysis reveals well-defined, coalesced grains, while optical measurements indicate an improved bandgap, reflecting superior film quality. These findings underscore the efficacy of β-Ga<sub>2</sub>O<sub>3</sub> buffers in mitigating lattice mismatch, advancing the development of high-quality β-Ga<sub>2</sub>O<sub>3</sub> films for high-power electronics and UV optoelectronic applications.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"25 18","pages":"7828–7833"},"PeriodicalIF":3.4000,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of SiO2 and Post-Annealed Ga2O3 Buffer Layers on Ga2O3 Thin Film Growth and Properties\",\"authors\":\"Noiba U. Botirova*, Azamat O. Arslanov, Gofur B. Eshonkulov, Jamoliddin X. Murodov, Ra’no Sh. Sharipova, Javohir Sh. Khudoykulov and Shavkat U. Yuldashev, \",\"doi\":\"10.1021/acs.cgd.5c01075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >This study explores the impact of SiO<sub>2</sub> and β-Ga<sub>2</sub>O<sub>3</sub> buffer layers on the synthesis and properties of β-Ga<sub>2</sub>O<sub>3</sub> thin films deposited on n-type Si (100) substrates via sol–gel spin coating. Structural, morphological, and optical properties were characterized using X-ray diffraction, scanning electron microscopy, and UV–vis spectroscopy. Films on β-Ga<sub>2</sub>O<sub>3</sub> buffers exhibit significantly enhanced crystallinity, reduced lattice strain, and lower defect density compared to SiO<sub>2</sub>/Si and direct Si substrates. Morphological analysis reveals well-defined, coalesced grains, while optical measurements indicate an improved bandgap, reflecting superior film quality. These findings underscore the efficacy of β-Ga<sub>2</sub>O<sub>3</sub> buffers in mitigating lattice mismatch, advancing the development of high-quality β-Ga<sub>2</sub>O<sub>3</sub> films for high-power electronics and UV optoelectronic applications.</p>\",\"PeriodicalId\":34,\"journal\":{\"name\":\"Crystal Growth & Design\",\"volume\":\"25 18\",\"pages\":\"7828–7833\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Growth & Design\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.cgd.5c01075\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.5c01075","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of SiO2 and Post-Annealed Ga2O3 Buffer Layers on Ga2O3 Thin Film Growth and Properties
This study explores the impact of SiO2 and β-Ga2O3 buffer layers on the synthesis and properties of β-Ga2O3 thin films deposited on n-type Si (100) substrates via sol–gel spin coating. Structural, morphological, and optical properties were characterized using X-ray diffraction, scanning electron microscopy, and UV–vis spectroscopy. Films on β-Ga2O3 buffers exhibit significantly enhanced crystallinity, reduced lattice strain, and lower defect density compared to SiO2/Si and direct Si substrates. Morphological analysis reveals well-defined, coalesced grains, while optical measurements indicate an improved bandgap, reflecting superior film quality. These findings underscore the efficacy of β-Ga2O3 buffers in mitigating lattice mismatch, advancing the development of high-quality β-Ga2O3 films for high-power electronics and UV optoelectronic applications.
期刊介绍：
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
