{"title":"Ag/In共掺杂提高SnSe多晶热电性能的调制结构和纳米复合材料","authors":"Jize Yu, Fujin Li, Junliang Zhu, Mingqian Hao, Changcun Li, Degang Zhao","doi":"10.1007/s11665-025-10706-8","DOIUrl":null,"url":null,"abstract":"<div><p>Polycrystalline SnSe with poor electrical and high thermal transport properties faces great challenges in commercialization, although monocrystalline SnSe boasts a high ZT value. To alleviate this problem, the Ag/In co-doped polycrystalline Sn<sub>1−2<i>x</i></sub>Ag<sub><i>x</i></sub>In<sub><i>x</i></sub>Se (<i>x</i> = 0.10, 0.15, 0.20) thermoelectric materials are proposed in this work by using vacuum melting/annealing/ball milling process. The co-doping of Ag and In atoms into polycrystalline SnSe matrix effectively modulates the electronic band structure near the Fermi level. At the same time, the introduced endotaxial nanostructure of AgInSe<sub>2</sub> serves as an additional scattering center, effectively scattering lower-energy carriers. This scattering mechanism leads to a substantial increase in the Seebeck coefficient and a marked reduction in lattice thermal conductivity. Notably, the optimized Sn<sub>0.8</sub>Ag<sub>0.1</sub>In<sub>0.1</sub>Se sample exhibited a remarkably low lattice thermal conductivity of 0.29 W m<sup>−1</sup> K<sup>−1</sup> at 750 K, representing the competitive value reported thus far. The synergistic interplay between the Ag/In co-doping and the endotaxial nanostructure effectively decouples phonon and electron transport in polycrystalline SnSe, leading to a substantial enhancement in its TE performance, providing a novel strategy for the development of practical TE materials with superior performance.</p></div>","PeriodicalId":644,"journal":{"name":"Journal of Materials Engineering and Performance","volume":"34 18","pages":"20240 - 20247"},"PeriodicalIF":2.0000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modulating Structures and Nanocomposites to Boost Thermoelectric Properties of Polycrystalline SnSe by Ag/In Co-doping\",\"authors\":\"Jize Yu, Fujin Li, Junliang Zhu, Mingqian Hao, Changcun Li, Degang Zhao\",\"doi\":\"10.1007/s11665-025-10706-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Polycrystalline SnSe with poor electrical and high thermal transport properties faces great challenges in commercialization, although monocrystalline SnSe boasts a high ZT value. To alleviate this problem, the Ag/In co-doped polycrystalline Sn<sub>1−2<i>x</i></sub>Ag<sub><i>x</i></sub>In<sub><i>x</i></sub>Se (<i>x</i> = 0.10, 0.15, 0.20) thermoelectric materials are proposed in this work by using vacuum melting/annealing/ball milling process. The co-doping of Ag and In atoms into polycrystalline SnSe matrix effectively modulates the electronic band structure near the Fermi level. At the same time, the introduced endotaxial nanostructure of AgInSe<sub>2</sub> serves as an additional scattering center, effectively scattering lower-energy carriers. This scattering mechanism leads to a substantial increase in the Seebeck coefficient and a marked reduction in lattice thermal conductivity. Notably, the optimized Sn<sub>0.8</sub>Ag<sub>0.1</sub>In<sub>0.1</sub>Se sample exhibited a remarkably low lattice thermal conductivity of 0.29 W m<sup>−1</sup> K<sup>−1</sup> at 750 K, representing the competitive value reported thus far. The synergistic interplay between the Ag/In co-doping and the endotaxial nanostructure effectively decouples phonon and electron transport in polycrystalline SnSe, leading to a substantial enhancement in its TE performance, providing a novel strategy for the development of practical TE materials with superior performance.</p></div>\",\"PeriodicalId\":644,\"journal\":{\"name\":\"Journal of Materials Engineering and Performance\",\"volume\":\"34 18\",\"pages\":\"20240 - 20247\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-02-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Engineering and Performance\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11665-025-10706-8\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Engineering and Performance","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s11665-025-10706-8","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
尽管单晶SnSe具有较高的ZT值,但其电学和热输运性能差的多晶SnSe在商业化方面面临很大挑战。为了解决这一问题,本文采用真空熔融/退火/球磨工艺制备了Ag/In共掺杂Sn1−2xAgxInxSe (x = 0.10, 0.15, 0.20)多晶热电材料。Ag和In原子在多晶SnSe基体中的共掺杂有效地调节了费米能级附近的电子能带结构。同时,引入的AgInSe2的内源性纳米结构作为额外的散射中心,有效地散射低能载流子。这种散射机制导致塞贝克系数的显著增加和晶格导热系数的显著降低。值得注意的是,优化后的Sn0.8Ag0.1In0.1Se样品在750 K时的晶格热导率非常低,为0.29 W m−1 K−1,代表了迄今为止报道的竞争值。Ag/In共掺杂与内源性纳米结构之间的协同相互作用有效地解耦了多晶SnSe中的声子和电子输运,从而大大提高了其TE性能,为开发具有优异性能的实用TE材料提供了新的策略。
Modulating Structures and Nanocomposites to Boost Thermoelectric Properties of Polycrystalline SnSe by Ag/In Co-doping
Polycrystalline SnSe with poor electrical and high thermal transport properties faces great challenges in commercialization, although monocrystalline SnSe boasts a high ZT value. To alleviate this problem, the Ag/In co-doped polycrystalline Sn1−2xAgxInxSe (x = 0.10, 0.15, 0.20) thermoelectric materials are proposed in this work by using vacuum melting/annealing/ball milling process. The co-doping of Ag and In atoms into polycrystalline SnSe matrix effectively modulates the electronic band structure near the Fermi level. At the same time, the introduced endotaxial nanostructure of AgInSe2 serves as an additional scattering center, effectively scattering lower-energy carriers. This scattering mechanism leads to a substantial increase in the Seebeck coefficient and a marked reduction in lattice thermal conductivity. Notably, the optimized Sn0.8Ag0.1In0.1Se sample exhibited a remarkably low lattice thermal conductivity of 0.29 W m−1 K−1 at 750 K, representing the competitive value reported thus far. The synergistic interplay between the Ag/In co-doping and the endotaxial nanostructure effectively decouples phonon and electron transport in polycrystalline SnSe, leading to a substantial enhancement in its TE performance, providing a novel strategy for the development of practical TE materials with superior performance.
期刊介绍:
ASM International''s Journal of Materials Engineering and Performance focuses on solving day-to-day engineering challenges, particularly those involving components for larger systems. The journal presents a clear understanding of relationships between materials selection, processing, applications and performance.
The Journal of Materials Engineering covers all aspects of materials selection, design, processing, characterization and evaluation, including how to improve materials properties through processes and process control of casting, forming, heat treating, surface modification and coating, and fabrication.
Testing and characterization (including mechanical and physical tests, NDE, metallography, failure analysis, corrosion resistance, chemical analysis, surface characterization, and microanalysis of surfaces, features and fractures), and industrial performance measurement are also covered