Ultralow Power Zirconium Electrolyte-Based Synaptic Device for Neuromorphic Computing

This work presents a novel electrolyte-based artificial synaptic device mimicking mammalian synaptic behavior because of an Electric Double Layer (EDL) for various neural-based applications. ZrO2, as an Electrolyte, with Indium-Gallium-Zinc-Oxide (IGZO) as a channel material, has been utilised for Synaptic Device (ZEISD). A novel electrolyte, ZrO2, with intercalation property, produces synaptic behaviors similar to biological neurons. The device shows sound synaptic functions, such as excitatory postsynaptic current (EPSC), inhibitory postsynaptic current (IPSC), and paired-pulse facilitation (PPF). With different spike amplitudes and frequencies, the device transitions from short-term potentiation (STP) to long-term potentiation (LTP) and depression characteristics, an essential neural behavior. FERMI, PRINT, and SRH modelling have been utilised to obtain neural behaviors. A higher On/Off ratio $\approx ~10^{5}$ has been obtained in line with designed and calibrated synaptic devices with ultralow power consumption as low as 0.162 pJ. Our findings hold significant implications for advancing the field of artificial neuromorphic devices, allowing for the creation of adaptable, dynamic functionalities.