硫醇胺配合物在SnTe纳米材料合成及表面工程中的应用

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2025-09-20 DOI:10.1021/acsnano.5c12627
Weite Meng, , , Lixiang Xu, , , Shaoqing Lu, , , Mingquan Li, , , Mengyao Li, , , Yu Zhang, , , Qingyue Wang, , , Wen-Jun Wang, , , Siqi Huo, , , Miguel A. Bañares, , , Marisol Martin-Gonzalez, , , Maria Ibáñez, , , Andreu Cabot, , , Min Hong*, , , Yu Liu*, , and , Khak Ho Lim*, 
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引用次数: 0

摘要

SnTe作为PbTe的无铅替代品引起了人们极大的研究兴趣;然而,其固有的高空穴浓度导致塞贝克系数低和电子导热系数升高,从而严重限制了其热电(TE)性能。在此,我们提出了一种具有成本效益的,二元硫醇胺介导的胶体合成方法来合成双掺杂SnTe纳米颗粒,从而消除了使用基于三正辛基膦的前体。富电子铋掺杂剂的引入降低了空穴浓度,增加了塞贝克系数。此外,合成后的硫基配合物表面处理促进了退火和固结过程中的原子相互扩散,导致了成分的重新分布和电子能带结构的调制。密度泛函理论(DFT)计算表明,通过Bi掺杂和cdse衍生的硫掺杂的共修饰将价带最大处的能量偏移从0.30 eV降低到0.10 eV,从而增强价带简并度。协同结构和电子带结构调制产生的snte基材料在900 K时具有创纪录的高功率因数2.1 mW m-1 K - 2,最大TE值(zT)为1.2,理论转换效率为8.3%。本研究报告了一种通用且可扩展的胶体合成策略,该策略将分层结构调制与电子频带工程相结合,提供了一种显著提高TE性能的协同途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Thiol–Amine Complexes for the Synthesis and Surface Engineering of SnTe Nanomaterials toward High Thermoelectric Performance

Thiol–Amine Complexes for the Synthesis and Surface Engineering of SnTe Nanomaterials toward High Thermoelectric Performance

Thiol–Amine Complexes for the Synthesis and Surface Engineering of SnTe Nanomaterials toward High Thermoelectric Performance

SnTe has attracted significant research interest as a lead-free alternative to PbTe; however, its intrinsically high hole concentration results in an undesirably low Seebeck coefficient and elevated electronic thermal conductivity, thus significantly limiting its thermoelectric (TE) performance. Herein, we present a cost-effective, binary thiol-amine-mediated colloidal synthesis method to synthesize Bi-doped SnTe nanoparticles, eliminating the use of tri-n-octylphosphine-based precursors. The introduction of an electron-rich Bi dopant reduces the hole concentration and increases the Seebeck coefficient. Furthermore, post-synthetic surface treatment with chalcogenidocadmate complexes promotes atomic interdiffusion during annealing and consolidation, leading to compositional redistribution and modulation of the electronic band structure. Density functional theory (DFT) calculations reveal that co-modification via Bi doping and CdSe-derived chalcogen incorporation reduces the energy offset at the valence band maxima from 0.30 eV to 0.10 eV, thereby enhancing valence band degeneracy. The synergistic structural and electronic band structure modulations produce an SnTe-based material with a record high power factor of 2.1 mW m–1 K–2 at 900 K, a maximum TE figure of merit (zT) of 1.2, and a promising theoretical conversion efficiency of 8.3%. This study reports a versatile and scalable colloidal synthesis strategy that integrates hierarchical structural modulation with electronic band engineering, offering a synergistic route to significantly enhance the TE performance.

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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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