Hongchun Zheng, , , Song Ling, , , Bo Kong*, , , Tixian Zeng*, , , Shan Jiang, , and , Wentao Wang*,
{"title":"IV族和VII族掺杂BiNbO4的供体和受体特性:杂化密度泛函研究","authors":"Hongchun Zheng, , , Song Ling, , , Bo Kong*, , , Tixian Zeng*, , , Shan Jiang, , and , Wentao Wang*, ","doi":"10.1021/acs.langmuir.5c02942","DOIUrl":null,"url":null,"abstract":"<p >This work systematically investigates the intrinsic defect behavior and corresponding conductivity type of BiNbO<sub>4</sub> under different representative thermodynamic equilibrium growth conditions using hybrid density functional theory calculations. The modulation effects of group IVB (Ti, Zr, and Hf) and group VIIA (F, Cl, Br, and I) element doping on its conductivity and electronic and optical properties are also explored. It is revealed that, under Bi-rich, relatively Nb-rich, and O-poor conditions, the easy ionization of the main native defects V<sub>O1</sub> (two O vacancy types), Nb<sub>Bi</sub>, and unintentional H<sub>i</sub> as shallow donors promotes BiNbO<sub>4</sub> to exhibit an unintentional <i>n</i>-type conductivity character. Still, under O-rich, Bi-poor, and Nb-poor conditions, the ionization of the dominant defects V<sub>Bi</sub> as excellent acceptors makes it present an intrinsic <i>p</i>-type behavior. Therefore, this affirms the experimental observation of the <i>n</i>-type character in BiNbO<sub>4</sub> and predicts its <i>p</i>-type behavior. For extrinsic doping, the substitution of Ti on Nb (Ti<sub>Nb</sub><sup>1–</sup>) significantly enhances the <i>p</i>-type conductivity under the presence of O-rich conditions. Ti becomes the best <i>p</i>-type doping candidate for BiNbO<sub>4</sub> among the group IVB elements. In contrast, the substitution of F on O (F<sub>O</sub><sup>1+</sup>) effectively boosts the superior <i>n</i>-type conductivity under the O-poor conditions, and F is the best <i>n</i>-type doping candidate among group VIIA elements. Furthermore, the electronic structure and optical absorption analyses indicate that the major intrinsic defects V<sub>O1</sub><sup>1+</sup>, V<sub>O1</sub><sup>2+</sup>, and V<sub>Bi</sub><sup>3–</sup> and the optimal extrinsic doping Ti<sub>Nb</sub><sup>1–</sup> and F<sub>O</sub><sup>1+</sup> do not lead to deep-level recombination centers but instead serve as active sites for photocatalytic reactions, synergistically improving visible-light absorption and charge carrier concentration. In addition, it is found that interstitial Nb<sub>i</sub> and an O2 vacancy defects respectively induce significant visible light absorption, especially for Nb<sub>i</sub>. Thus, via the control of growth conditions and the optimization of doping elements, this study provides theoretical guidance on the intrinsic and extrinsic doping strategies for tuning the conductivity and other properties, further enhancing the photocatalytic performance of BiNbO<sub>4</sub>.</p>","PeriodicalId":50,"journal":{"name":"Langmuir","volume":"41 38","pages":"26149–26165"},"PeriodicalIF":3.9000,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Donor and Acceptor Characteristics of Group IV and VII Doped BiNbO4: A Hybrid Density Functional Investigation\",\"authors\":\"Hongchun Zheng, , , Song Ling, , , Bo Kong*, , , Tixian Zeng*, , , Shan Jiang, , and , Wentao Wang*, \",\"doi\":\"10.1021/acs.langmuir.5c02942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >This work systematically investigates the intrinsic defect behavior and corresponding conductivity type of BiNbO<sub>4</sub> under different representative thermodynamic equilibrium growth conditions using hybrid density functional theory calculations. The modulation effects of group IVB (Ti, Zr, and Hf) and group VIIA (F, Cl, Br, and I) element doping on its conductivity and electronic and optical properties are also explored. It is revealed that, under Bi-rich, relatively Nb-rich, and O-poor conditions, the easy ionization of the main native defects V<sub>O1</sub> (two O vacancy types), Nb<sub>Bi</sub>, and unintentional H<sub>i</sub> as shallow donors promotes BiNbO<sub>4</sub> to exhibit an unintentional <i>n</i>-type conductivity character. Still, under O-rich, Bi-poor, and Nb-poor conditions, the ionization of the dominant defects V<sub>Bi</sub> as excellent acceptors makes it present an intrinsic <i>p</i>-type behavior. Therefore, this affirms the experimental observation of the <i>n</i>-type character in BiNbO<sub>4</sub> and predicts its <i>p</i>-type behavior. For extrinsic doping, the substitution of Ti on Nb (Ti<sub>Nb</sub><sup>1–</sup>) significantly enhances the <i>p</i>-type conductivity under the presence of O-rich conditions. Ti becomes the best <i>p</i>-type doping candidate for BiNbO<sub>4</sub> among the group IVB elements. In contrast, the substitution of F on O (F<sub>O</sub><sup>1+</sup>) effectively boosts the superior <i>n</i>-type conductivity under the O-poor conditions, and F is the best <i>n</i>-type doping candidate among group VIIA elements. Furthermore, the electronic structure and optical absorption analyses indicate that the major intrinsic defects V<sub>O1</sub><sup>1+</sup>, V<sub>O1</sub><sup>2+</sup>, and V<sub>Bi</sub><sup>3–</sup> and the optimal extrinsic doping Ti<sub>Nb</sub><sup>1–</sup> and F<sub>O</sub><sup>1+</sup> do not lead to deep-level recombination centers but instead serve as active sites for photocatalytic reactions, synergistically improving visible-light absorption and charge carrier concentration. In addition, it is found that interstitial Nb<sub>i</sub> and an O2 vacancy defects respectively induce significant visible light absorption, especially for Nb<sub>i</sub>. Thus, via the control of growth conditions and the optimization of doping elements, this study provides theoretical guidance on the intrinsic and extrinsic doping strategies for tuning the conductivity and other properties, further enhancing the photocatalytic performance of BiNbO<sub>4</sub>.</p>\",\"PeriodicalId\":50,\"journal\":{\"name\":\"Langmuir\",\"volume\":\"41 38\",\"pages\":\"26149–26165\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Langmuir\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.langmuir.5c02942\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Langmuir","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.langmuir.5c02942","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Donor and Acceptor Characteristics of Group IV and VII Doped BiNbO4: A Hybrid Density Functional Investigation
This work systematically investigates the intrinsic defect behavior and corresponding conductivity type of BiNbO4 under different representative thermodynamic equilibrium growth conditions using hybrid density functional theory calculations. The modulation effects of group IVB (Ti, Zr, and Hf) and group VIIA (F, Cl, Br, and I) element doping on its conductivity and electronic and optical properties are also explored. It is revealed that, under Bi-rich, relatively Nb-rich, and O-poor conditions, the easy ionization of the main native defects VO1 (two O vacancy types), NbBi, and unintentional Hi as shallow donors promotes BiNbO4 to exhibit an unintentional n-type conductivity character. Still, under O-rich, Bi-poor, and Nb-poor conditions, the ionization of the dominant defects VBi as excellent acceptors makes it present an intrinsic p-type behavior. Therefore, this affirms the experimental observation of the n-type character in BiNbO4 and predicts its p-type behavior. For extrinsic doping, the substitution of Ti on Nb (TiNb1–) significantly enhances the p-type conductivity under the presence of O-rich conditions. Ti becomes the best p-type doping candidate for BiNbO4 among the group IVB elements. In contrast, the substitution of F on O (FO1+) effectively boosts the superior n-type conductivity under the O-poor conditions, and F is the best n-type doping candidate among group VIIA elements. Furthermore, the electronic structure and optical absorption analyses indicate that the major intrinsic defects VO11+, VO12+, and VBi3– and the optimal extrinsic doping TiNb1– and FO1+ do not lead to deep-level recombination centers but instead serve as active sites for photocatalytic reactions, synergistically improving visible-light absorption and charge carrier concentration. In addition, it is found that interstitial Nbi and an O2 vacancy defects respectively induce significant visible light absorption, especially for Nbi. Thus, via the control of growth conditions and the optimization of doping elements, this study provides theoretical guidance on the intrinsic and extrinsic doping strategies for tuning the conductivity and other properties, further enhancing the photocatalytic performance of BiNbO4.
期刊介绍:
Langmuir is an interdisciplinary journal publishing articles in the following subject categories:
Colloids: surfactants and self-assembly, dispersions, emulsions, foams
Interfaces: adsorption, reactions, films, forces
Biological Interfaces: biocolloids, biomolecular and biomimetic materials
Materials: nano- and mesostructured materials, polymers, gels, liquid crystals
Electrochemistry: interfacial charge transfer, charge transport, electrocatalysis, electrokinetic phenomena, bioelectrochemistry
Devices and Applications: sensors, fluidics, patterning, catalysis, photonic crystals
However, when high-impact, original work is submitted that does not fit within the above categories, decisions to accept or decline such papers will be based on one criteria: What Would Irving Do?
Langmuir ranks #2 in citations out of 136 journals in the category of Physical Chemistry with 113,157 total citations. The journal received an Impact Factor of 4.384*.
This journal is also indexed in the categories of Materials Science (ranked #1) and Multidisciplinary Chemistry (ranked #5).