一种用于太赫兹应用的大芯片宽度tmic封装解决方案

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Ze Du;Zhi-Yu Duan;Ke Zhan;Zhen-Hua Wu;Ji-Sheng Chen;Hu Li;Ming-Zhou Zhan
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引用次数: 0

摘要

在这封信中,提出了一种在太赫兹(THz)频率下的大芯片宽度太赫兹单片集成电路(tmic)封装解决方案。本设计提出的电磁带隙(EBG)结构可以有效抑制狭缝宽度增大时产生的各种干扰模式。采用集成片上偶极子天线转换模型实现了带地共面波导与波导之间的模式转换和互连。为了验证所提出的解决方案,设计并制作了芯片宽度为3760 μ m的封装结构和片上集成偶极子天线过渡模型。测试结果表明,在214 ~ 242 GHz频率范围内,回波损耗优于9 dB,插入损耗优于4 dB,去嵌入平均损耗小于1 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Large Chip-Width TMICs Packaging Solution for THz Applications
In this letter, a large chip-width terahertz monolithic integrated circuits (TMICs) packaging solution at terahertz (THz) frequencies is presented. The proposed electromagnetic bandgap (EBG) structure in this design can effectively suppress various interference modes generated when the slit width increases. The mode conversion and interconnection between coplanar waveguide with ground (CPWG) and waveguide are realized using integrated on-chip dipole antenna transition model. To verify the proposed solution, a packaging structure accommodating a chip width of 3760 $\mu $ m and an on-chip integrated dipole antenna transition model were designed and fabricated. The test results show that in the frequency range of 214–242 GHz, the return loss is better than 9 dB and the insertion loss is better than 4 dB, the de-embedded average loss is less than 1 dB.
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