范德华p-n异质结平面内各向异性驱动的定向电荷输运

IF 5.1 3区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nanoscale Pub Date : 2025-09-18 DOI:10.1039/d5nr02390d

Rahul Paramanik, Tanima Kundu, Soumik Das, Alexei Barinov, Bikash Das, Bipul Karmakar, Sujan Maity, Mainak Palit, Kapildeb Dolui, Sanjoy K. Mahatha, SUBHADEEP DATTA

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引用次数: 0

摘要

低对称二维（2D）范德华（vdW）材料能够实现各向异性电荷传输，这对偏振敏感光电子学至关重要。本文研究了一种$p$-GeS/$n$-MoS$_2$异质结构二极管，通过角分辨光发射光谱（ARPES）揭示了GeS的各向异性色散对定向电荷流动的影响。角分辨拉曼光谱证实了晶体取向，在GeS场效应晶体管（fet）中的输运测量显示其迁移率各向异性为$\sim 3.4$。异质结具有方向相关的二极管特性，抗双极性输运和ii型带对准，导致各向异性光电响应。这些发现为利用vdW异质结构中的电子各向异性进行节能整流开辟了一条途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-Plane Anisotropy-Driven Directional Charge Transport in van der Waals p-n Heterojunction

Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a $p$-GeS/$n$-MoS$_2$ heterostructure diode is investigated, where the anisotropic band dispersion of GeS, revealed by angle-resolved photoemission spectroscopy (ARPES), governs directional charge flow. Angle-resolved Raman spectroscopy confirms the crystallographic orientation, and transport measurements in GeS field-effect transistors (FETs) show a mobility anisotropy of $\sim 3.4$. The heterojunction exhibits orientation-dependent diode characteristics, anti-ambipolar transport, and a type-II band alignment, leading to anisotropic optoelectronic response. These findings establish a pathway for utilizing electronic anisotropy in vdW heterostructures for energy-efficient rectification.

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来源期刊

Nanoscale CHEMISTRY, MULTIDISCIPLINARY-NANOSCIENCE & NANOTECHNOLOGY

CiteScore

12.10

自引率

3.00%

发文量

1628

审稿时长

1.6 months

期刊介绍： Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.