Sagar Kallepelli, Satish Maheshwaram, Kiran Kumar P.
{"title":"利用圆形布局晶体管提高器件性能：CDGT与CSNT的比较研究","authors":"Sagar Kallepelli, Satish Maheshwaram, Kiran Kumar P.","doi":"10.1007/s12633-025-03381-w","DOIUrl":null,"url":null,"abstract":"<div><p>Circular layout Transistors provide an effective approach to mitigating short-channel effects (SCEs) in advanced technology nodes. This study explores the design and simulation of Circular Double Gate Transistors (CDGTs) and Circular Stacked Nanosheet Transistors (CSNTs) for high-performance (HP) applications at a 10 nm gate length. The devices were designed using gds2mesh process and evaluated through fully calibrated TCAD simulations to analyze both DC and analog/RF performance. The CSNT exhibited superior DC characteristics, achieving the highest ON-state drive current (I<sub>ON</sub>) of 2.27 × 10<sup>–3</sup> A and the lowest OFF-state leakage current (I<sub>OFF</sub>) of 5.38 × 10<sup>–9</sup> A. Furthermore, it demonstrated an impressive switching ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of 4.23 × 10<sup>5</sup>, marking a 3.7 × improvement over the CDGT. The CSNT also outperformed the CDGT in analog/RF performance, reinforcing its potential for next-generation nanoelectronic applications. These findings establish CSNTs as promising candidates for future transistor architectures, offering enhanced scalability and performance in advanced semiconductor technologies.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2899 - 2907"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing Device Performance with Circular Layout Transistors: A Comparative Study of CDGT and CSNT\",\"authors\":\"Sagar Kallepelli, Satish Maheshwaram, Kiran Kumar P.\",\"doi\":\"10.1007/s12633-025-03381-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Circular layout Transistors provide an effective approach to mitigating short-channel effects (SCEs) in advanced technology nodes. This study explores the design and simulation of Circular Double Gate Transistors (CDGTs) and Circular Stacked Nanosheet Transistors (CSNTs) for high-performance (HP) applications at a 10 nm gate length. The devices were designed using gds2mesh process and evaluated through fully calibrated TCAD simulations to analyze both DC and analog/RF performance. The CSNT exhibited superior DC characteristics, achieving the highest ON-state drive current (I<sub>ON</sub>) of 2.27 × 10<sup>–3</sup> A and the lowest OFF-state leakage current (I<sub>OFF</sub>) of 5.38 × 10<sup>–9</sup> A. Furthermore, it demonstrated an impressive switching ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of 4.23 × 10<sup>5</sup>, marking a 3.7 × improvement over the CDGT. The CSNT also outperformed the CDGT in analog/RF performance, reinforcing its potential for next-generation nanoelectronic applications. These findings establish CSNTs as promising candidates for future transistor architectures, offering enhanced scalability and performance in advanced semiconductor technologies.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 12\",\"pages\":\"2899 - 2907\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03381-w\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03381-w","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Enhancing Device Performance with Circular Layout Transistors: A Comparative Study of CDGT and CSNT
Circular layout Transistors provide an effective approach to mitigating short-channel effects (SCEs) in advanced technology nodes. This study explores the design and simulation of Circular Double Gate Transistors (CDGTs) and Circular Stacked Nanosheet Transistors (CSNTs) for high-performance (HP) applications at a 10 nm gate length. The devices were designed using gds2mesh process and evaluated through fully calibrated TCAD simulations to analyze both DC and analog/RF performance. The CSNT exhibited superior DC characteristics, achieving the highest ON-state drive current (ION) of 2.27 × 10–3 A and the lowest OFF-state leakage current (IOFF) of 5.38 × 10–9 A. Furthermore, it demonstrated an impressive switching ratio (ION/IOFF) of 4.23 × 105, marking a 3.7 × improvement over the CDGT. The CSNT also outperformed the CDGT in analog/RF performance, reinforcing its potential for next-generation nanoelectronic applications. These findings establish CSNTs as promising candidates for future transistor architectures, offering enhanced scalability and performance in advanced semiconductor technologies.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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