部分耗尽吸收器的数字合金雪崩光电二极管。

IF 3.3 2区 物理与天体物理 Q2 OPTICS
Optics letters Pub Date : 2025-09-15 DOI:10.1364/OL.568050
Wenyang Wang, Jinshan Yao, Lize Li, Luyu Wang, Tianyu Long, Huachen Ge, Hong Lu, Baile Chen
{"title":"部分耗尽吸收器的数字合金雪崩光电二极管。","authors":"Wenyang Wang, Jinshan Yao, Lize Li, Luyu Wang, Tianyu Long, Huachen Ge, Hong Lu, Baile Chen","doi":"10.1364/OL.568050","DOIUrl":null,"url":null,"abstract":"<p><p>Digital alloy (DA) InAlAs has been employed as the multiplication layer in separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs) to suppress excess noise in our previous work. In this work, a partially depleted absorber (PDA) is introduced to enhance bandwidth, while a back-illumination structure with flip-chip bonding is utilized to improve quantum efficiency and further boost response speed through inductive peaking. The APD exhibits a dark current density of approximately 8.5 mA/cm² at 90% breakdown voltage, a multiplication gain of 50 before avalanche breakdown, and a responsivity of 0.49 A/W at unit gain. Frequency response measurements indicate a significant improvement after flip-chip bonding, with the bandwidth increasing from 15.6 GHz to 22 GHz. Eye diagrams were obtained at data rates up to 40 Gbps, demonstrating the device's high-speed performance.</p>","PeriodicalId":19540,"journal":{"name":"Optics letters","volume":"50 18","pages":"5873-5876"},"PeriodicalIF":3.3000,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InAlAs digital alloy avalanche photodiode with partially depleted absorber.\",\"authors\":\"Wenyang Wang, Jinshan Yao, Lize Li, Luyu Wang, Tianyu Long, Huachen Ge, Hong Lu, Baile Chen\",\"doi\":\"10.1364/OL.568050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Digital alloy (DA) InAlAs has been employed as the multiplication layer in separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs) to suppress excess noise in our previous work. In this work, a partially depleted absorber (PDA) is introduced to enhance bandwidth, while a back-illumination structure with flip-chip bonding is utilized to improve quantum efficiency and further boost response speed through inductive peaking. The APD exhibits a dark current density of approximately 8.5 mA/cm² at 90% breakdown voltage, a multiplication gain of 50 before avalanche breakdown, and a responsivity of 0.49 A/W at unit gain. Frequency response measurements indicate a significant improvement after flip-chip bonding, with the bandwidth increasing from 15.6 GHz to 22 GHz. Eye diagrams were obtained at data rates up to 40 Gbps, demonstrating the device's high-speed performance.</p>\",\"PeriodicalId\":19540,\"journal\":{\"name\":\"Optics letters\",\"volume\":\"50 18\",\"pages\":\"5873-5876\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1364/OL.568050\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OL.568050","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0

摘要

在以往的工作中,数字合金(DA) InAlAs被用作分离吸收、分级、充电和倍增(SAGCM)雪崩光电二极管(apd)的倍增层,以抑制过量噪声。在这项工作中,引入了部分耗尽吸收器(PDA)来增强带宽,而利用倒装芯片键合的背照结构来提高量子效率,并通过感应峰值进一步提高响应速度。在90%击穿电压下,APD的暗电流密度约为8.5 mA/cm²,雪崩击穿前的倍增增益为50,单位增益下的响应度为0.49 a /W。频率响应测量表明,倒装片键合后,带宽从15.6 GHz增加到22 GHz,显著改善。在高达40 Gbps的数据速率下获得了眼图,证明了该设备的高速性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
InAlAs digital alloy avalanche photodiode with partially depleted absorber.

Digital alloy (DA) InAlAs has been employed as the multiplication layer in separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs) to suppress excess noise in our previous work. In this work, a partially depleted absorber (PDA) is introduced to enhance bandwidth, while a back-illumination structure with flip-chip bonding is utilized to improve quantum efficiency and further boost response speed through inductive peaking. The APD exhibits a dark current density of approximately 8.5 mA/cm² at 90% breakdown voltage, a multiplication gain of 50 before avalanche breakdown, and a responsivity of 0.49 A/W at unit gain. Frequency response measurements indicate a significant improvement after flip-chip bonding, with the bandwidth increasing from 15.6 GHz to 22 GHz. Eye diagrams were obtained at data rates up to 40 Gbps, demonstrating the device's high-speed performance.

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来源期刊
Optics letters
Optics letters 物理-光学
CiteScore
6.60
自引率
8.30%
发文量
2275
审稿时长
1.7 months
期刊介绍: The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community. Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.
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