{"title":"无碰撞构建立方体(BBCube) 3D:使用WOW和COW的异构3D集成","authors":"Norio Chujo;Hiroyuki Ryoson;Koji Sakui;Shinji Sugatani;Masao Taguchi;Takayuki Ohba","doi":"10.1109/JETCAS.2025.3591677","DOIUrl":null,"url":null,"abstract":"We propose a novel technology called Bumpless Build Cube (BBCubeTM) 3D for AI and high-performance computing (HPC) applications that require high bandwidth and power efficiency. BBCube 3D is constructed through heterogeneous 3D integration, in which xPU (e.g., CPU, GPU, TPU) chiplets and DRAM dies are stacked using a combination of bumpless wafer-on-wafer (WoW) and chip-on-wafer (CoW) processes. The bumpless stacking process adopts a method similar to multilevel metallization in the back-end-of-line (BEOL), enabling BBCube to provide reliable and high-density interconnects between dies. Moreover, BBCube features low-capacitance and low-impedance through-silicon vias (TSVs) due to the use of thin silicon and slim TSV structures. To further enhance performance, a highly parallel DRAM architecture leveraging the bumpless WoW process is introduced. The high-density TSVs enable lower data transmission speeds without compromising bandwidth. Additionally, the adoption of four-phase shielded I/Os (FPS-I/O) allows for a reduction in power supply voltage. BBCube 3D has the potential to achieve a bandwidth 30 times higher than DDR5 and four times higher than HBM2E, while achieving bit access energy consumption reduced to one-twentieth that of DDR5 and one-fifth that of HBM2E. The low-impedance TSVs in BBCube ensure robust power integrity for the xPU stacked on top of the layered DRAM. Furthermore, integrating an xPU on top of the Cube enables efficient cooling of high-power xPUs. BBCube can accommodate an xPU with a power density exceeding 50 W/cm<sup>2</sup> — comparable to the latest GPUs — while maintaining the DRAM temperature below 95°C.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 3","pages":"404-414"},"PeriodicalIF":3.8000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bumpless Build Cube (BBCube) 3D: Heterogeneous 3D Integration Using WOW and COW\",\"authors\":\"Norio Chujo;Hiroyuki Ryoson;Koji Sakui;Shinji Sugatani;Masao Taguchi;Takayuki Ohba\",\"doi\":\"10.1109/JETCAS.2025.3591677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a novel technology called Bumpless Build Cube (BBCubeTM) 3D for AI and high-performance computing (HPC) applications that require high bandwidth and power efficiency. BBCube 3D is constructed through heterogeneous 3D integration, in which xPU (e.g., CPU, GPU, TPU) chiplets and DRAM dies are stacked using a combination of bumpless wafer-on-wafer (WoW) and chip-on-wafer (CoW) processes. The bumpless stacking process adopts a method similar to multilevel metallization in the back-end-of-line (BEOL), enabling BBCube to provide reliable and high-density interconnects between dies. Moreover, BBCube features low-capacitance and low-impedance through-silicon vias (TSVs) due to the use of thin silicon and slim TSV structures. To further enhance performance, a highly parallel DRAM architecture leveraging the bumpless WoW process is introduced. The high-density TSVs enable lower data transmission speeds without compromising bandwidth. Additionally, the adoption of four-phase shielded I/Os (FPS-I/O) allows for a reduction in power supply voltage. BBCube 3D has the potential to achieve a bandwidth 30 times higher than DDR5 and four times higher than HBM2E, while achieving bit access energy consumption reduced to one-twentieth that of DDR5 and one-fifth that of HBM2E. The low-impedance TSVs in BBCube ensure robust power integrity for the xPU stacked on top of the layered DRAM. Furthermore, integrating an xPU on top of the Cube enables efficient cooling of high-power xPUs. BBCube can accommodate an xPU with a power density exceeding 50 W/cm<sup>2</sup> — comparable to the latest GPUs — while maintaining the DRAM temperature below 95°C.\",\"PeriodicalId\":48827,\"journal\":{\"name\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"volume\":\"15 3\",\"pages\":\"404-414\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2025-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11088111/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11088111/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Bumpless Build Cube (BBCube) 3D: Heterogeneous 3D Integration Using WOW and COW
We propose a novel technology called Bumpless Build Cube (BBCubeTM) 3D for AI and high-performance computing (HPC) applications that require high bandwidth and power efficiency. BBCube 3D is constructed through heterogeneous 3D integration, in which xPU (e.g., CPU, GPU, TPU) chiplets and DRAM dies are stacked using a combination of bumpless wafer-on-wafer (WoW) and chip-on-wafer (CoW) processes. The bumpless stacking process adopts a method similar to multilevel metallization in the back-end-of-line (BEOL), enabling BBCube to provide reliable and high-density interconnects between dies. Moreover, BBCube features low-capacitance and low-impedance through-silicon vias (TSVs) due to the use of thin silicon and slim TSV structures. To further enhance performance, a highly parallel DRAM architecture leveraging the bumpless WoW process is introduced. The high-density TSVs enable lower data transmission speeds without compromising bandwidth. Additionally, the adoption of four-phase shielded I/Os (FPS-I/O) allows for a reduction in power supply voltage. BBCube 3D has the potential to achieve a bandwidth 30 times higher than DDR5 and four times higher than HBM2E, while achieving bit access energy consumption reduced to one-twentieth that of DDR5 and one-fifth that of HBM2E. The low-impedance TSVs in BBCube ensure robust power integrity for the xPU stacked on top of the layered DRAM. Furthermore, integrating an xPU on top of the Cube enables efficient cooling of high-power xPUs. BBCube can accommodate an xPU with a power density exceeding 50 W/cm2 — comparable to the latest GPUs — while maintaining the DRAM temperature below 95°C.
期刊介绍:
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.