pH控制对苯二胺多层分子摩尔超晶格中依赖于扭角的界面量子隧穿

IF 4.3 Q1 OPTICS
Ujjala Dey, Arun Chattopadhyay
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引用次数: 0

摘要

基于分子的电子电路和器件组件可能会带来基于量子现象的功能的新方面,这可能是使用传统架构无法实现的。为了实现这些概念,有必要开发定义良好的组件,使能量传递、质量和电荷在多个长度尺度上传输。本文报道了多层分子超晶格可以为实现上述目标提供一个初步的方向。例如,使用导电原子力显微镜测量纳米片时,对苯二胺的多层二维摩尔超晶格在每个界面上显示出易于识别的与扭转角相关的电导率。与晶格层状水分子相比,界面处水分子的缺失降低了电子隧穿势垒,从而提高了电导率。重要的是,色散中超晶格的质子化和去质子化导致了高的界面电流,前者大约增加了三个数量级。这些结果可以通过态密度计算、载流子密度和模拟扫描隧道显微镜(STM)图进一步解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

pH Controlled Twist-Angle Dependent Interfacial Quantum Tunneling in Multilayer Molecular Moiré Superlattices of p-Phenylenediamine

pH Controlled Twist-Angle Dependent Interfacial Quantum Tunneling in Multilayer Molecular Moiré Superlattices of p-Phenylenediamine

pH Controlled Twist-Angle Dependent Interfacial Quantum Tunneling in Multilayer Molecular Moiré Superlattices of p-Phenylenediamine

pH Controlled Twist-Angle Dependent Interfacial Quantum Tunneling in Multilayer Molecular Moiré Superlattices of p-Phenylenediamine

Molecule-based electronic circuits and device components may bring novel aspects in their functioning based on quantum phenomena that may not be attainable using conventional architecture. In order to implement such concepts development of well-defined assemblies that enable energy transfer, mass, and charge transports across several length scales is necessary. Herein it is reported that multilayer molecular moiré superlattices may provide an initial direction for attaining the abovementioned objectives. For example, multilayered 2D moiré superlattices of p-phenylenediamine showed easily identifiable twist angle-dependent electrical conductivity at each interface, as measured for the nanosheet using conductive atomic force microscopy. The absence of water molecules at the interfaces, as compared to the layered water molecules in the lattices, lowered the electron tunneling barrier and thus, increased the conductivity. Importantly, protonation and deprotonation of the superlattices in the dispersion resulted in high interfacial currents with about three orders of magnitude increase for the former. These results are further explained by density of states calculations along with carrier density and simulated scanning tunneling microscopy (STM) plots.

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CiteScore
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