{"title":"超宽带隙半导体器件的热特性：综述（物理学报）。研究》9/2025)","authors":"Hassan Irshad Bhatti, Xiaohang Li","doi":"10.1002/apxr.70016","DOIUrl":null,"url":null,"abstract":"<p><b>Thermal Characterization for UWBG Devices</b></p><p>Review number e2500039 by Hassan Irshad Bhatti and Xiaohang Li highlights state-of-the-art thermal characterization techniques for ultrawide bandgap (UWBG) semiconductor devices, including Ga<sub>2</sub>O<sub>2</sub>, AlN, and diamond. By critically evaluating optical and electrical methods–such as thermoreflectance imaging, micro-Raman thermometry, and micro-thin film thermocouples–the study guides effective thermal metrology selection to address self-heating and reliability in next-generation power and RF electronics.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.70016","citationCount":"0","resultStr":"{\"title\":\"Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review (Adv. Phys. Res. 9/2025)\",\"authors\":\"Hassan Irshad Bhatti, Xiaohang Li\",\"doi\":\"10.1002/apxr.70016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Thermal Characterization for UWBG Devices</b></p><p>Review number e2500039 by Hassan Irshad Bhatti and Xiaohang Li highlights state-of-the-art thermal characterization techniques for ultrawide bandgap (UWBG) semiconductor devices, including Ga<sub>2</sub>O<sub>2</sub>, AlN, and diamond. By critically evaluating optical and electrical methods–such as thermoreflectance imaging, micro-Raman thermometry, and micro-thin film thermocouples–the study guides effective thermal metrology selection to address self-heating and reliability in next-generation power and RF electronics.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":100035,\"journal\":{\"name\":\"Advanced Physics Research\",\"volume\":\"4 9\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.70016\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Physics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/apxr.70016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Physics Research","FirstCategoryId":"1085","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/apxr.70016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review (Adv. Phys. Res. 9/2025)
Thermal Characterization for UWBG Devices
Review number e2500039 by Hassan Irshad Bhatti and Xiaohang Li highlights state-of-the-art thermal characterization techniques for ultrawide bandgap (UWBG) semiconductor devices, including Ga2O2, AlN, and diamond. By critically evaluating optical and electrical methods–such as thermoreflectance imaging, micro-Raman thermometry, and micro-thin film thermocouples–the study guides effective thermal metrology selection to address self-heating and reliability in next-generation power and RF electronics.
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