超越硅高原：晶体管发展新材料的融合

IF 36.3 1区材料科学 Q1 Engineering

Nano-Micro Letters Pub Date : 2025-09-15 DOI:10.1007/s40820-025-01898-8

Jung Hun Lee, Jae Young Kim, Hyeon-Ji Lee, Sung-Jin Choi, Yoon Jung Lee, Ho Won Jang

{"title":"超越硅高原：晶体管发展新材料的融合","authors":"Jung Hun Lee, Jae Young Kim, Hyeon-Ji Lee, Sung-Jin Choi, Yoon Jung Lee, Ho Won Jang","doi":"10.1007/s40820-025-01898-8","DOIUrl":null,"url":null,"abstract":"<div><h2>Highlights</h2><div>\n \n <ul>\n <li>\n <p>This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.</p>\n </li>\n <li>\n <p>These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.</p>\n </li>\n <li>\n <p>The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.</p>\n </li>\n </ul>\n </div></div>","PeriodicalId":714,"journal":{"name":"Nano-Micro Letters","volume":"18 1","pages":""},"PeriodicalIF":36.3000,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-025-01898-8.pdf","citationCount":"0","resultStr":"{\"title\":\"Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution\",\"authors\":\"Jung Hun Lee, Jae Young Kim, Hyeon-Ji Lee, Sung-Jin Choi, Yoon Jung Lee, Ho Won Jang\",\"doi\":\"10.1007/s40820-025-01898-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><h2>Highlights</h2><div>\\n \\n <ul>\\n <li>\\n <p>This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.</p>\\n </li>\\n <li>\\n <p>These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.</p>\\n </li>\\n <li>\\n <p>The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.</p>\\n </li>\\n </ul>\\n </div></div>\",\"PeriodicalId\":714,\"journal\":{\"name\":\"Nano-Micro Letters\",\"volume\":\"18 1\",\"pages\":\"\"},\"PeriodicalIF\":36.3000,\"publicationDate\":\"2025-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s40820-025-01898-8.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano-Micro Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40820-025-01898-8\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano-Micro Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40820-025-01898-8","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了二维范德华材料、莫特绝缘体、卤化物钙钛矿和非晶氧化物等具有清洁界面、超薄通道和缺陷容限等优点的半导体材料。当这些材料与先进的栅极介质和下一代互连相结合时，可以为载流子散射、氧化物厚度限制和界面退化等缩放挑战提供协同解决方案。该综述还讨论了可靠性问题，包括热不稳定性和漏电流，并探讨了人工智能硬件、内存计算和三维集成的未来应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution

Highlights

This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.
These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.
The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.