{"title":"具有无机传输层的高效无铅CH3NH3SnI3钙钛矿太阳能电池:SCAPS-1D和基于pvsysts的数值研究","authors":"Foyzul Karim , Md Habibur Rahman Aslam , Anisul Islam Suva","doi":"10.1016/j.jpcs.2025.113175","DOIUrl":null,"url":null,"abstract":"<div><div>Perovskite solar cells (PSCs) have emerged as a promising photovoltaic technology due to their high efficiency, tunable bandgap, and low-cost fabrication. However, challenges such as lead toxicity, suboptimal architecture, and defect-induced recombination continue to hinder the large-scale commercialization of PSCs. In this study, a comprehensive numerical analysis of an FTO/STO/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/NiO/Au device was performed using SCAPS-1D, complemented by PVSyst modeling to assess module-scale performance. Critical parameters—including absorber and ETL thickness, absorber doping density, intrinsic recombination coefficients, defect densities, and resistive losses—are systematically investigated. The device architecture achieves a simulated power conversion efficiency of 30.72 % (V<sub>oc</sub> = 1.2159 V, J<sub>sc</sub> = 28.39 mA/cm<sup>2</sup>, FF = 89.00 %) under AM 1.5G illumination, approaching the Shockley–Queisser limit for its 1.3 eV bandgap. Sensitivity analysis reveals that the CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber and its interface with STO are the most defect-sensitive regions, where excessive defect densities drastically reduce efficiency, while NiO and other interfaces remain defect-tolerant. Optimal performance is further linked to low radiative (≤10<sup>−13</sup> cm<sup>3</sup>/s) and Auger (≤10<sup>−33</sup> cm<sup>6</sup>/s) recombination, as well as minimal series resistance (≤1 Ω cm<sup>2</sup>) and high shunt resistance (≥10<sup>5</sup> Ω cm<sup>2</sup>). PVSyst simulations confirmed the scalability of the device architecture to a 72-cell module, while underscoring the need for thermal management to mitigate V<sub>oc</sub> and PCE losses at elevated temperatures. These results highlight that precise control of structural parameters, defect passivation—especially at the absorber/ETL interface—and resistive loss minimization can enable high-efficiency, environmentally benign PSCs with performance nearing the theoretical efficiency limit.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"208 ","pages":"Article 113175"},"PeriodicalIF":4.9000,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-efficiency lead-free CH3NH3SnI3 perovskite solar cell with inorganic transport layers: SCAPS-1D and PVSyst-Based numerical study\",\"authors\":\"Foyzul Karim , Md Habibur Rahman Aslam , Anisul Islam Suva\",\"doi\":\"10.1016/j.jpcs.2025.113175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Perovskite solar cells (PSCs) have emerged as a promising photovoltaic technology due to their high efficiency, tunable bandgap, and low-cost fabrication. However, challenges such as lead toxicity, suboptimal architecture, and defect-induced recombination continue to hinder the large-scale commercialization of PSCs. In this study, a comprehensive numerical analysis of an FTO/STO/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/NiO/Au device was performed using SCAPS-1D, complemented by PVSyst modeling to assess module-scale performance. Critical parameters—including absorber and ETL thickness, absorber doping density, intrinsic recombination coefficients, defect densities, and resistive losses—are systematically investigated. The device architecture achieves a simulated power conversion efficiency of 30.72 % (V<sub>oc</sub> = 1.2159 V, J<sub>sc</sub> = 28.39 mA/cm<sup>2</sup>, FF = 89.00 %) under AM 1.5G illumination, approaching the Shockley–Queisser limit for its 1.3 eV bandgap. Sensitivity analysis reveals that the CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber and its interface with STO are the most defect-sensitive regions, where excessive defect densities drastically reduce efficiency, while NiO and other interfaces remain defect-tolerant. Optimal performance is further linked to low radiative (≤10<sup>−13</sup> cm<sup>3</sup>/s) and Auger (≤10<sup>−33</sup> cm<sup>6</sup>/s) recombination, as well as minimal series resistance (≤1 Ω cm<sup>2</sup>) and high shunt resistance (≥10<sup>5</sup> Ω cm<sup>2</sup>). PVSyst simulations confirmed the scalability of the device architecture to a 72-cell module, while underscoring the need for thermal management to mitigate V<sub>oc</sub> and PCE losses at elevated temperatures. These results highlight that precise control of structural parameters, defect passivation—especially at the absorber/ETL interface—and resistive loss minimization can enable high-efficiency, environmentally benign PSCs with performance nearing the theoretical efficiency limit.</div></div>\",\"PeriodicalId\":16811,\"journal\":{\"name\":\"Journal of Physics and Chemistry of Solids\",\"volume\":\"208 \",\"pages\":\"Article 113175\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2025-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics and Chemistry of Solids\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022369725006286\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics and Chemistry of Solids","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022369725006286","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
High-efficiency lead-free CH3NH3SnI3 perovskite solar cell with inorganic transport layers: SCAPS-1D and PVSyst-Based numerical study
Perovskite solar cells (PSCs) have emerged as a promising photovoltaic technology due to their high efficiency, tunable bandgap, and low-cost fabrication. However, challenges such as lead toxicity, suboptimal architecture, and defect-induced recombination continue to hinder the large-scale commercialization of PSCs. In this study, a comprehensive numerical analysis of an FTO/STO/CH3NH3SnI3/NiO/Au device was performed using SCAPS-1D, complemented by PVSyst modeling to assess module-scale performance. Critical parameters—including absorber and ETL thickness, absorber doping density, intrinsic recombination coefficients, defect densities, and resistive losses—are systematically investigated. The device architecture achieves a simulated power conversion efficiency of 30.72 % (Voc = 1.2159 V, Jsc = 28.39 mA/cm2, FF = 89.00 %) under AM 1.5G illumination, approaching the Shockley–Queisser limit for its 1.3 eV bandgap. Sensitivity analysis reveals that the CH3NH3SnI3 absorber and its interface with STO are the most defect-sensitive regions, where excessive defect densities drastically reduce efficiency, while NiO and other interfaces remain defect-tolerant. Optimal performance is further linked to low radiative (≤10−13 cm3/s) and Auger (≤10−33 cm6/s) recombination, as well as minimal series resistance (≤1 Ω cm2) and high shunt resistance (≥105 Ω cm2). PVSyst simulations confirmed the scalability of the device architecture to a 72-cell module, while underscoring the need for thermal management to mitigate Voc and PCE losses at elevated temperatures. These results highlight that precise control of structural parameters, defect passivation—especially at the absorber/ETL interface—and resistive loss minimization can enable high-efficiency, environmentally benign PSCs with performance nearing the theoretical efficiency limit.
期刊介绍:
The Journal of Physics and Chemistry of Solids is a well-established international medium for publication of archival research in condensed matter and materials sciences. Areas of interest broadly include experimental and theoretical research on electronic, magnetic, spectroscopic and structural properties as well as the statistical mechanics and thermodynamics of materials. The focus is on gaining physical and chemical insight into the properties and potential applications of condensed matter systems.
Within the broad scope of the journal, beyond regular contributions, the editors have identified submissions in the following areas of physics and chemistry of solids to be of special current interest to the journal:
Low-dimensional systems
Exotic states of quantum electron matter including topological phases
Energy conversion and storage
Interfaces, nanoparticles and catalysts.