Qiwu Hu;Zhijun Zhang;Shenghong Xie;Yinyin Hu;Guang Zhang;Bocang Qiu;Yuechun Shi
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Fabry–Perot Semiconductor Laser With High-Temperature Operation
We experimentally demonstrate a 1.31-$\mu $ m Fabry-Perot (FP) semiconductor laser developed for data communications at temperatures exceeding $130~^{\circ }\rm {C}$ based on InGaAlAs/InP material system. By optimizing the epi-structure as well as doping profiles, we were able to demonstrate that the device can be operated at ambient temperature as high as $150~^{\circ }\rm {C}$ with an output power of about 2.8 mW when the cavity length is $300~\mu $ m. This work paves the way for high-temperature applications, making it feasible to develop low-cost devices without the additional cooling equipments.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.