探索具有niox基选择性触点的硅包合物薄膜在光电器件中的潜力

IF 4.4 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Charif Tamin, Anil Kumar Bharwal, Céline Chevalier, Alain Fave, Erwann Fourmond, Stéphane Roques, Aziz Dinia, Abdelilah Slaoui, Thomas Fix
{"title":"探索具有niox基选择性触点的硅包合物薄膜在光电器件中的潜力","authors":"Charif Tamin,&nbsp;Anil Kumar Bharwal,&nbsp;Céline Chevalier,&nbsp;Alain Fave,&nbsp;Erwann Fourmond,&nbsp;Stéphane Roques,&nbsp;Aziz Dinia,&nbsp;Abdelilah Slaoui,&nbsp;Thomas Fix","doi":"10.1002/admi.202500301","DOIUrl":null,"url":null,"abstract":"<p>Silicon clathrates are a unique class of materials with a cage-like structure that offer significant advantages for optoelectronic applications, particularly in indoor photovoltaics (IPV). Their direct bandgaps and tunable electronic properties from metal-like to semiconductor-like behavior enable a wide range of optoelectronic functionalities. In this study, a photovoltaic device is demonstrated based on semiconducting silicon clathrate films (SCF) synthesized from crystalline silicon (c-Si) wafers, with NiOx incorporated as hole selective contact. XPS and Auger spectroscopy confirmed the incorporation of Na within the SCF framework, in agreement with the type-II clathrate structure revealed by XRD analysis. Optical and electronic measurements indicate that the SCF exhibits intrinsic-like behavior with a bandgap of 1.72 eV. Integration of SCF with NiOx resulted in rectification and a clear photovoltaic response under illumination, confirming device functionality. Band alignment analysis suggested efficient hole transport and secondary charge generation from the c-Si substrate. These results highlight the importance of selective contact engineering for efficient charge extraction and demonstrate the potential for further optimization of SCF photovoltaic devices.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 17","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500301","citationCount":"0","resultStr":"{\"title\":\"Exploring the Potential of Silicon Clathrate Films with NiOx-Based Selective Contacts for Optoelectronic Devices\",\"authors\":\"Charif Tamin,&nbsp;Anil Kumar Bharwal,&nbsp;Céline Chevalier,&nbsp;Alain Fave,&nbsp;Erwann Fourmond,&nbsp;Stéphane Roques,&nbsp;Aziz Dinia,&nbsp;Abdelilah Slaoui,&nbsp;Thomas Fix\",\"doi\":\"10.1002/admi.202500301\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Silicon clathrates are a unique class of materials with a cage-like structure that offer significant advantages for optoelectronic applications, particularly in indoor photovoltaics (IPV). Their direct bandgaps and tunable electronic properties from metal-like to semiconductor-like behavior enable a wide range of optoelectronic functionalities. In this study, a photovoltaic device is demonstrated based on semiconducting silicon clathrate films (SCF) synthesized from crystalline silicon (c-Si) wafers, with NiOx incorporated as hole selective contact. XPS and Auger spectroscopy confirmed the incorporation of Na within the SCF framework, in agreement with the type-II clathrate structure revealed by XRD analysis. Optical and electronic measurements indicate that the SCF exhibits intrinsic-like behavior with a bandgap of 1.72 eV. Integration of SCF with NiOx resulted in rectification and a clear photovoltaic response under illumination, confirming device functionality. Band alignment analysis suggested efficient hole transport and secondary charge generation from the c-Si substrate. These results highlight the importance of selective contact engineering for efficient charge extraction and demonstrate the potential for further optimization of SCF photovoltaic devices.</p>\",\"PeriodicalId\":115,\"journal\":{\"name\":\"Advanced Materials Interfaces\",\"volume\":\"12 17\",\"pages\":\"\"},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2025-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500301\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/admi.202500301\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/admi.202500301","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

硅包合物是一类独特的材料,具有笼状结构,为光电应用,特别是室内光伏(IPV)提供了显著的优势。它们的直接带隙和可调谐的电子特性,从金属样到半导体样的行为,实现了广泛的光电功能。在本研究中,展示了一种基于晶体硅(c-Si)晶圆合成的半导体硅笼合物薄膜(SCF)的光伏器件,其中加入了NiOx作为孔选择触点。XPS和俄歇光谱证实了在SCF框架内存在Na,这与XRD分析显示的ii型包合物结构一致。光学和电子测量表明,SCF具有类本征特性,带隙为1.72 eV。SCF与NiOx的集成产生了整流,并在照明下产生了清晰的光伏响应,确认了设备的功能。带对准分析表明,c-Si衬底具有有效的空穴传输和二次电荷产生。这些结果强调了选择性接触工程对有效电荷提取的重要性,并展示了进一步优化SCF光伏器件的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Exploring the Potential of Silicon Clathrate Films with NiOx-Based Selective Contacts for Optoelectronic Devices

Exploring the Potential of Silicon Clathrate Films with NiOx-Based Selective Contacts for Optoelectronic Devices

Exploring the Potential of Silicon Clathrate Films with NiOx-Based Selective Contacts for Optoelectronic Devices

Exploring the Potential of Silicon Clathrate Films with NiOx-Based Selective Contacts for Optoelectronic Devices

Exploring the Potential of Silicon Clathrate Films with NiOx-Based Selective Contacts for Optoelectronic Devices

Silicon clathrates are a unique class of materials with a cage-like structure that offer significant advantages for optoelectronic applications, particularly in indoor photovoltaics (IPV). Their direct bandgaps and tunable electronic properties from metal-like to semiconductor-like behavior enable a wide range of optoelectronic functionalities. In this study, a photovoltaic device is demonstrated based on semiconducting silicon clathrate films (SCF) synthesized from crystalline silicon (c-Si) wafers, with NiOx incorporated as hole selective contact. XPS and Auger spectroscopy confirmed the incorporation of Na within the SCF framework, in agreement with the type-II clathrate structure revealed by XRD analysis. Optical and electronic measurements indicate that the SCF exhibits intrinsic-like behavior with a bandgap of 1.72 eV. Integration of SCF with NiOx resulted in rectification and a clear photovoltaic response under illumination, confirming device functionality. Band alignment analysis suggested efficient hole transport and secondary charge generation from the c-Si substrate. These results highlight the importance of selective contact engineering for efficient charge extraction and demonstrate the potential for further optimization of SCF photovoltaic devices.

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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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