电子束辐照下重组增强4H-SiC和GaN的位错滑动

IF 0.5 4区 材料科学 Q4 CRYSTALLOGRAPHY
Yu. O. Kulanchikov, P. S. Vergeles, E. E. Yakimov, E. B. Yakimov
{"title":"电子束辐照下重组增强4H-SiC和GaN的位错滑动","authors":"Yu. O. Kulanchikov,&nbsp;P. S. Vergeles,&nbsp;E. E. Yakimov,&nbsp;E. B. Yakimov","doi":"10.1134/S1063774525600401","DOIUrl":null,"url":null,"abstract":"<p>The results of studying the recombination-enhanced dislocation motion in GaN and 4H-SiC have been analyzed. It is shown that in both crystals, when irradiated by a low-energy electron beam, dislocations can shift at liquid nitrogen temperature. The activation energies of the dislocation glide stimulated by electron beam irradiation are estimated. Results demonstrating practically activation-free migration of double kinks along a 30° partial Si-core dislocation in 4H-SiC are presented. It is shown that localized obstacles significantly affect the dislocation motion in GaN both under the action of shear stresses and under irradiation. The excess charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier but also stimulate dislocation unpinning from obstacles.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"70 4","pages":"638 - 645"},"PeriodicalIF":0.5000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation\",\"authors\":\"Yu. O. Kulanchikov,&nbsp;P. S. Vergeles,&nbsp;E. E. Yakimov,&nbsp;E. B. Yakimov\",\"doi\":\"10.1134/S1063774525600401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The results of studying the recombination-enhanced dislocation motion in GaN and 4H-SiC have been analyzed. It is shown that in both crystals, when irradiated by a low-energy electron beam, dislocations can shift at liquid nitrogen temperature. The activation energies of the dislocation glide stimulated by electron beam irradiation are estimated. Results demonstrating practically activation-free migration of double kinks along a 30° partial Si-core dislocation in 4H-SiC are presented. It is shown that localized obstacles significantly affect the dislocation motion in GaN both under the action of shear stresses and under irradiation. The excess charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier but also stimulate dislocation unpinning from obstacles.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":\"70 4\",\"pages\":\"638 - 645\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063774525600401\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774525600401","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

摘要

分析了在GaN和4H-SiC中重组增强位错运动的研究结果。结果表明,在这两种晶体中,当低能电子束照射时,位错在液氮温度下会发生位移。估计了电子束辐照激发位错滑动的活化能。结果表明,在4H-SiC中,双扭结沿30°部分si核位错实际上是无激活的迁移。结果表明,在剪切应力和辐照作用下,局域障碍对氮化镓中位错运动有显著影响。通过辐照引入氮化镓的多余载流子不仅有助于克服佩尔斯势垒,而且还能刺激位错从障碍物上脱落。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation

Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation

Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation

The results of studying the recombination-enhanced dislocation motion in GaN and 4H-SiC have been analyzed. It is shown that in both crystals, when irradiated by a low-energy electron beam, dislocations can shift at liquid nitrogen temperature. The activation energies of the dislocation glide stimulated by electron beam irradiation are estimated. Results demonstrating practically activation-free migration of double kinks along a 30° partial Si-core dislocation in 4H-SiC are presented. It is shown that localized obstacles significantly affect the dislocation motion in GaN both under the action of shear stresses and under irradiation. The excess charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier but also stimulate dislocation unpinning from obstacles.

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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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