Yu. O. Kulanchikov, P. S. Vergeles, E. E. Yakimov, E. B. Yakimov
{"title":"电子束辐照下重组增强4H-SiC和GaN的位错滑动","authors":"Yu. O. Kulanchikov, P. S. Vergeles, E. E. Yakimov, E. B. Yakimov","doi":"10.1134/S1063774525600401","DOIUrl":null,"url":null,"abstract":"<p>The results of studying the recombination-enhanced dislocation motion in GaN and 4H-SiC have been analyzed. It is shown that in both crystals, when irradiated by a low-energy electron beam, dislocations can shift at liquid nitrogen temperature. The activation energies of the dislocation glide stimulated by electron beam irradiation are estimated. Results demonstrating practically activation-free migration of double kinks along a 30° partial Si-core dislocation in 4H-SiC are presented. It is shown that localized obstacles significantly affect the dislocation motion in GaN both under the action of shear stresses and under irradiation. The excess charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier but also stimulate dislocation unpinning from obstacles.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"70 4","pages":"638 - 645"},"PeriodicalIF":0.5000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation\",\"authors\":\"Yu. O. Kulanchikov, P. S. Vergeles, E. E. Yakimov, E. B. Yakimov\",\"doi\":\"10.1134/S1063774525600401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The results of studying the recombination-enhanced dislocation motion in GaN and 4H-SiC have been analyzed. It is shown that in both crystals, when irradiated by a low-energy electron beam, dislocations can shift at liquid nitrogen temperature. The activation energies of the dislocation glide stimulated by electron beam irradiation are estimated. Results demonstrating practically activation-free migration of double kinks along a 30° partial Si-core dislocation in 4H-SiC are presented. It is shown that localized obstacles significantly affect the dislocation motion in GaN both under the action of shear stresses and under irradiation. The excess charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier but also stimulate dislocation unpinning from obstacles.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":\"70 4\",\"pages\":\"638 - 645\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063774525600401\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774525600401","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Recombination-Enhanced Dislocation Glide in 4H-SiC and GaN under Electron Beam Irradiation
The results of studying the recombination-enhanced dislocation motion in GaN and 4H-SiC have been analyzed. It is shown that in both crystals, when irradiated by a low-energy electron beam, dislocations can shift at liquid nitrogen temperature. The activation energies of the dislocation glide stimulated by electron beam irradiation are estimated. Results demonstrating practically activation-free migration of double kinks along a 30° partial Si-core dislocation in 4H-SiC are presented. It is shown that localized obstacles significantly affect the dislocation motion in GaN both under the action of shear stresses and under irradiation. The excess charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier but also stimulate dislocation unpinning from obstacles.
期刊介绍:
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.