Application of ZnO quantum dots in photodetectors

This article reviews the application progress of ZnO quantum dots (QD) in photodetectors, with a focus on exploring their performance optimization in homojunction and heterojunction photodetectors, as well as the potential applications in UV and multi wavelength photodetection fields. ZnO QD have become an important material for high-performance photodetectors due to quantum confinement effect, and excellent optoelectronic properties. In homojunction photodetectors, the I-type band structure formed by ZnO QD and nanowires effectively promotes the separation and transport of photo generated carriers, significantly improving the responsivity and sensitivity of the device. In heterojunction photodetectors, ZnO QD are combined with two-dimensional materials or other QD, utilizing the band bending and built-in electric field at the interface to further optimize the carrier separation efficiency and enhance the photodetection performance. In the application field, ZnO QD exhibit high sensitivity and fast response in ultraviolet photodetection, while in multi wavelength photodetection, by combining with other materials, wide spectral absorption from ultraviolet to near-infrared is achieved, expanding their application range. In summary, ZnO QD-based photodetectors have broad application prospects in the field of high-performance photodetection. Future research will further explore new material combinations and structural designs to meet diverse photodetection needs.