V. V. Privezentsev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, E. P. Kirilenko, A. V. Goryachev
{"title":"PECVD法制备锌离子掺杂SiO2薄膜的研究","authors":"V. V. Privezentsev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, E. P. Kirilenko, A. V. Goryachev","doi":"10.1134/S1027451025700673","DOIUrl":null,"url":null,"abstract":"<p>The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with <sup>64</sup>Zn<sup>+</sup> ions with an energy of 50 keV (dose 7 × 10<sup>16</sup> cm<sup>–2</sup>) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation zinc is distributed in the SiO<sub>2</sub> film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"19 2","pages":"455 - 459"},"PeriodicalIF":0.4000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of SiO2 Films Obtained by PECVD and Doped with Zn Ions\",\"authors\":\"V. V. Privezentsev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, E. P. Kirilenko, A. V. Goryachev\",\"doi\":\"10.1134/S1027451025700673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with <sup>64</sup>Zn<sup>+</sup> ions with an energy of 50 keV (dose 7 × 10<sup>16</sup> cm<sup>–2</sup>) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation zinc is distributed in the SiO<sub>2</sub> film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.</p>\",\"PeriodicalId\":671,\"journal\":{\"name\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"volume\":\"19 2\",\"pages\":\"455 - 459\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1027451025700673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451025700673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Study of SiO2 Films Obtained by PECVD and Doped with Zn Ions
The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with 64Zn+ ions with an energy of 50 keV (dose 7 × 1016 cm–2) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation zinc is distributed in the SiO2 film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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