M. A. Smirnova, V. I. Bachurin, L. A. Mazaletsky, D. E. Pukhov, A. B. Churilov
{"title":"离子辐照下硅表面周期性起伏发育的起始","authors":"M. A. Smirnova, V. I. Bachurin, L. A. Mazaletsky, D. E. Pukhov, A. B. Churilov","doi":"10.1134/S102745102570051X","DOIUrl":null,"url":null,"abstract":"<p>The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"19 2","pages":"354 - 357"},"PeriodicalIF":0.4000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation\",\"authors\":\"M. A. Smirnova, V. I. Bachurin, L. A. Mazaletsky, D. E. Pukhov, A. B. Churilov\",\"doi\":\"10.1134/S102745102570051X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).</p>\",\"PeriodicalId\":671,\"journal\":{\"name\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"volume\":\"19 2\",\"pages\":\"354 - 357\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S102745102570051X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S102745102570051X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation
The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).
期刊介绍:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.