离子辐照下硅表面周期性起伏发育的起始

IF 0.4 Q4 PHYSICS, CONDENSED MATTER
M. A. Smirnova, V. I. Bachurin, L. A. Mazaletsky, D. E. Pukhov, A. B. Churilov
{"title":"离子辐照下硅表面周期性起伏发育的起始","authors":"M. A. Smirnova,&nbsp;V. I. Bachurin,&nbsp;L. A. Mazaletsky,&nbsp;D. E. Pukhov,&nbsp;A. B. Churilov","doi":"10.1134/S102745102570051X","DOIUrl":null,"url":null,"abstract":"<p>The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"19 2","pages":"354 - 357"},"PeriodicalIF":0.4000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation\",\"authors\":\"M. A. Smirnova,&nbsp;V. I. Bachurin,&nbsp;L. A. Mazaletsky,&nbsp;D. E. Pukhov,&nbsp;A. B. Churilov\",\"doi\":\"10.1134/S102745102570051X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).</p>\",\"PeriodicalId\":671,\"journal\":{\"name\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"volume\":\"19 2\",\"pages\":\"354 - 357\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S102745102570051X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S102745102570051X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了在离子束入射角θ = 30°、40°和50°的情况下,用30 keV聚焦镓离子束辐照硅表面的周期性形核过程的研究结果。结果表明:近表面硅层中的镓析出(θ = 30°)、底部边界处以孔洞形式存在的地形不均匀性以及溅射坑的正面壁面(θ = 40°和50°)是引发周期性起伏的主要因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation

Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation

Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation

The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信