弯曲单晶中快速带电粒子的体积捕获机制

IF 0.4 Q4 PHYSICS, CONDENSED MATTER
E. A. Mazur
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引用次数: 0

摘要

研究了快速带电粒子在弯曲单晶中体积俘获的影响。研究了快速带电粒子的横向能量损失、悬停效应和体积捕获判据。考虑了体积捕获的可能机制:由快速带电粒子(质子、轻子)晶体激发引起的横向能量损失,弯曲晶体中粒子的多次散射,以及弯曲晶体中粒子的弹性散射和衍射。结果表明,在悬停区域,快速带电粒子的横向和纵向能量损失率比纵向和横向能量损失率显著增加,且与逆介电常数矩阵的非对角线元素与对角线元素之比在数量级上相等。确定了快质子(轻子)的体积俘获是由于弯曲晶体中的衍射以及粒子密度矩阵中非对角线元素的阻尼的影响。提出的衍射机制是基于考虑了快质子(轻子)在弯曲晶体中的量子相干散射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Mechanisms of the Volume Capture of Fast Charged Particles in a Curved Single Crystal

Mechanisms of the Volume Capture of Fast Charged Particles in a Curved Single Crystal

Mechanisms of the Volume Capture of Fast Charged Particles in a Curved Single Crystal

The effect of the volume capture of fast charged particles in a curved single crystal is studied. The transverse energy losses, the hovering effect, and the criterion for the volume capture of fast charged particles are studied. Possible mechanisms of volume capture are considered: transverse energy losses due to crystal excitation by a fast charged particle (proton, lepton), multiple scattering of particles in a curved crystal, and elastic scattering and diffraction of particles in a curved crystal. It is shown that in the hovering region, the ratio of the loss rates of the transverse and longitudinal energy of fast charged particles increases significantly compared to the ratio of the longitudinal and transverse energies and is equal in order of magnitude to the ratio of the off-diagonal elements of the inverse dielectric permittivity matrix to the diagonal ones. It is established that the effect of the volume capture of fast protons (leptons) is due to diffraction in a curved crystal, as well as the effects of damping of the off-diagonal elements of the particle density matrix. The proposed diffraction mechanism is based on taking into account the quantum coherent scattering of a fast proton (lepton) in a curved crystal.

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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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