薄膜氧离子电池溅射电解质的制备与界面工程[j]

Alexander Schmid, Tobias M. Huber, Florian Karbus, Maximillian Weiss, Andreas Limbeck and Jürgen Fleig
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摘要

研究了反应性直流磁控溅射法制备的氧化锆(YSZ)薄膜电解质的结构、化学和电化学性能。薄膜被沉积在各种电极材料上,包括铂和混合离子电子导电(MIEC)钙钛矿氧化物,有或没有钆掺杂的二氧化铈(GDC)缓冲层。利用扫描电子显微镜、激光烧蚀电感耦合等离子体质谱、x射线荧光光谱和x射线衍射等表征技术对薄膜的微观结构和化学性质进行了分析。采用电化学阻抗谱法和恒流充放电循环法对YSZ薄膜的离子电导率和界面电阻进行了评价。结果表明,YSZ薄膜具有致密的多晶结构,具有高度柱状的晶粒形态,化学成分接近所需的化学计量。薄膜的离子电导率略低于单晶YSZ,活化能约为1.09 eV。GDC缓冲层的引入显著降低了生长在MIEC钙钛矿薄膜上的YSZ的界面电阻,从而将有效电解质电阻降低了75%。制备了薄膜电解质oib,并在250℃下操作,通过界面工程,即引入GDC缓冲层,证实了性能的提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Preparation and interfacial engineering of sputtered electrolytes for thin film oxygen ion batteries†

Preparation and interfacial engineering of sputtered electrolytes for thin film oxygen ion batteries†

This study investigates the structural, chemical, and electrochemical properties of yttria-stabilized zirconia (YSZ) thin film electrolytes for thin film oxygen ion batteries (OIB), prepared by reactive DC magnetron sputtering. The films were deposited on various electrode materials, including platinum and mixed ionic electronic conducting (MIEC) perovskite oxides, with and without gadolinia-doped ceria (GDC) buffer layers. Characterization techniques such as scanning electron microscopy, laser ablation inductively coupled plasma mass spectrometry, X-ray fluorescence spectroscopy and X-ray diffractometry were employed to analyze the microstructural and chemical properties of the films. Electrochemical impedance spectroscopy and galvanostatic charge–discharge cycling were used to evaluate the ionic conductivity and interfacial resistance of the YSZ films. The results demonstrate that the YSZ films exhibit a dense, polycrystalline structure with a highly columnar grain morphology and a chemical composition close to the desired stoichiometry. The ionic conductivity of the films is slightly lower than that of single crystal YSZ, with an activation energy of approximately 1.09 eV. The introduction of GDC buffer layers significantly reduces the interfacial resistance of YSZ grown on MIEC perovskite films, thereby lowering the effective electrolyte resistance by up to 75%. Thin film electrolyte OIBs were prepared and operated at 250 °C, and substantiated the performance increase by interfacial engineering, i.e. the introduction of GDC buffer layers.

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