用于射频传感的光电振荡器近分岔理论研究

IF 2.1 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Brenden Glover;Joseph Suelzer;Gautam Vemuri
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引用次数: 0

摘要

基于我们最近报道的射频注入下的亚阈值窄带OEO的实验结果,我们分析和数值研究了自由运行和射频注入情况下OEO的稳态和动态行为。该系统在分岔工作点附近进行了分析,重点研究了与阈值相对应的零阶分岔。我们利用稳定性分析、线性化和分岔周围缓慢变化的包络方法来研究OEO响应的时间特征,特别是滤波器带宽和外部时间延迟的作用。本文对时间延迟对倍周期航路轨迹的影响进行了分析和数值表征。在零阶自由运行分岔附近,我们建立了注入射频信号扰动模型,并研究了稳态和瞬态响应。射频放大在零阶自由运行分岔下和附近解析表征,重点关注增益和外部时间延迟的影响。最后,在脉冲射频信号存在的情况下,我们推导了一个分析模型,该模型复制了OEO的瞬态响应,该模型显示出一系列递减步骤导致饱和。该方法与最近报道的实验和数值结果非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical Investigation of Optoelectronic Oscillators Near Bifurcation for Radio-Frequency Sensing
Motivated by our recently reported experimental results of a sub-threshold narowband OEO subject to RF injection, we analytically and numerically investigate the steady-state and dynamic behavior of an OEO in the free-running and RF injected cases. This system is analyzed near the bifurcation operating points with a focus on the zeroth-order bifurcation corresponding to threshold. We utilize stability analysis, linearization, and a slowly-varying envelope approach around bifurcations to investigate the time signatures of the OEO response, in particular, the role of the filter bandwidth and external time delay. The influence of the time delay on the trajectory of a period doubling route is analytically and numerically characterized. Near the zeroth-order free-running bifurcation, we model injected RF signal perturbations and investigate the steady-state and transient response. The RF amplification is analytically characterized below and near the zeroth-order free-running bifurcation of the OEO, focusing on the influence of the gain and external time delay. Finally, in the presence of a pulsed RF signal, we derive an analytic model that replicates the transient response of the OEO, which exhibits a series of diminishing steps leading to saturation. This approach exhibits excellent agreement with the recently reported experimental and numerical results.
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来源期刊
IEEE Journal of Quantum Electronics
IEEE Journal of Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.70
自引率
4.00%
发文量
99
审稿时长
3.0 months
期刊介绍: The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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