{"title":"用于射频传感的光电振荡器近分岔理论研究","authors":"Brenden Glover;Joseph Suelzer;Gautam Vemuri","doi":"10.1109/JQE.2025.3597248","DOIUrl":null,"url":null,"abstract":"Motivated by our recently reported experimental results of a sub-threshold narowband OEO subject to RF injection, we analytically and numerically investigate the steady-state and dynamic behavior of an OEO in the free-running and RF injected cases. This system is analyzed near the bifurcation operating points with a focus on the zeroth-order bifurcation corresponding to threshold. We utilize stability analysis, linearization, and a slowly-varying envelope approach around bifurcations to investigate the time signatures of the OEO response, in particular, the role of the filter bandwidth and external time delay. The influence of the time delay on the trajectory of a period doubling route is analytically and numerically characterized. Near the zeroth-order free-running bifurcation, we model injected RF signal perturbations and investigate the steady-state and transient response. The RF amplification is analytically characterized below and near the zeroth-order free-running bifurcation of the OEO, focusing on the influence of the gain and external time delay. Finally, in the presence of a pulsed RF signal, we derive an analytic model that replicates the transient response of the OEO, which exhibits a series of diminishing steps leading to saturation. This approach exhibits excellent agreement with the recently reported experimental and numerical results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-10"},"PeriodicalIF":2.1000,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical Investigation of Optoelectronic Oscillators Near Bifurcation for Radio-Frequency Sensing\",\"authors\":\"Brenden Glover;Joseph Suelzer;Gautam Vemuri\",\"doi\":\"10.1109/JQE.2025.3597248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Motivated by our recently reported experimental results of a sub-threshold narowband OEO subject to RF injection, we analytically and numerically investigate the steady-state and dynamic behavior of an OEO in the free-running and RF injected cases. This system is analyzed near the bifurcation operating points with a focus on the zeroth-order bifurcation corresponding to threshold. We utilize stability analysis, linearization, and a slowly-varying envelope approach around bifurcations to investigate the time signatures of the OEO response, in particular, the role of the filter bandwidth and external time delay. The influence of the time delay on the trajectory of a period doubling route is analytically and numerically characterized. Near the zeroth-order free-running bifurcation, we model injected RF signal perturbations and investigate the steady-state and transient response. The RF amplification is analytically characterized below and near the zeroth-order free-running bifurcation of the OEO, focusing on the influence of the gain and external time delay. Finally, in the presence of a pulsed RF signal, we derive an analytic model that replicates the transient response of the OEO, which exhibits a series of diminishing steps leading to saturation. This approach exhibits excellent agreement with the recently reported experimental and numerical results.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":\"61 5\",\"pages\":\"1-10\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2025-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11121072/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11121072/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Theoretical Investigation of Optoelectronic Oscillators Near Bifurcation for Radio-Frequency Sensing
Motivated by our recently reported experimental results of a sub-threshold narowband OEO subject to RF injection, we analytically and numerically investigate the steady-state and dynamic behavior of an OEO in the free-running and RF injected cases. This system is analyzed near the bifurcation operating points with a focus on the zeroth-order bifurcation corresponding to threshold. We utilize stability analysis, linearization, and a slowly-varying envelope approach around bifurcations to investigate the time signatures of the OEO response, in particular, the role of the filter bandwidth and external time delay. The influence of the time delay on the trajectory of a period doubling route is analytically and numerically characterized. Near the zeroth-order free-running bifurcation, we model injected RF signal perturbations and investigate the steady-state and transient response. The RF amplification is analytically characterized below and near the zeroth-order free-running bifurcation of the OEO, focusing on the influence of the gain and external time delay. Finally, in the presence of a pulsed RF signal, we derive an analytic model that replicates the transient response of the OEO, which exhibits a series of diminishing steps leading to saturation. This approach exhibits excellent agreement with the recently reported experimental and numerical results.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.