Gui-Zhu Ran , Ya-Le Tao , Zheng-Tang Liu , Qi-Jun Liu
{"title":"二元重金属硫族化合物p型透明导电材料的筛选","authors":"Gui-Zhu Ran , Ya-Le Tao , Zheng-Tang Liu , Qi-Jun Liu","doi":"10.1016/j.jssc.2025.125638","DOIUrl":null,"url":null,"abstract":"<div><div>This study uses density functional theory to screen p-type transparent conductive materials (TCMs) for optoelectronic applications, focusing on binary heavy metal chalcogenides. 180 materials from the Materials Project Database were analyzed for electronic structures, optical properties, and transport characteristics. 16 candidates with bandgaps between 1 and 4 eV were identified. Further hybrid functional calculations, hole effective mass evaluations, and p-type conductivity analysis revealed 8 suitable materials, with 4 showing good stability. ZnS, ZnS<sub>2</sub> and ZnTe performed best, with ZnTe manifesting conductivity of 240.84 S cm<sup>−1</sup>. The findings offer valuable insights for developing p-type materials in optoelectronics.</div></div>","PeriodicalId":378,"journal":{"name":"Journal of Solid State Chemistry","volume":"353 ","pages":"Article 125638"},"PeriodicalIF":3.5000,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Screening of p-type transparent conducting materials for binary heavy metal chalcogenides\",\"authors\":\"Gui-Zhu Ran , Ya-Le Tao , Zheng-Tang Liu , Qi-Jun Liu\",\"doi\":\"10.1016/j.jssc.2025.125638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study uses density functional theory to screen p-type transparent conductive materials (TCMs) for optoelectronic applications, focusing on binary heavy metal chalcogenides. 180 materials from the Materials Project Database were analyzed for electronic structures, optical properties, and transport characteristics. 16 candidates with bandgaps between 1 and 4 eV were identified. Further hybrid functional calculations, hole effective mass evaluations, and p-type conductivity analysis revealed 8 suitable materials, with 4 showing good stability. ZnS, ZnS<sub>2</sub> and ZnTe performed best, with ZnTe manifesting conductivity of 240.84 S cm<sup>−1</sup>. The findings offer valuable insights for developing p-type materials in optoelectronics.</div></div>\",\"PeriodicalId\":378,\"journal\":{\"name\":\"Journal of Solid State Chemistry\",\"volume\":\"353 \",\"pages\":\"Article 125638\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Solid State Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022459625004621\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Solid State Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022459625004621","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
摘要
本研究利用密度泛函理论筛选光电子应用的p型透明导电材料(TCMs),重点研究二元重金属硫族化合物。从材料项目数据库中对180种材料进行了电子结构、光学性质和输运特性分析。确定了16个带隙在1 ~ 4 eV之间的候选带隙。进一步的混合泛函计算、孔洞有效质量评估和p型电导率分析显示了8种合适的材料,其中4种具有良好的稳定性。ZnS、ZnS2和ZnTe表现最好,ZnTe的电导率为240.84 S cm−1。这一发现为开发光电子领域的p型材料提供了有价值的见解。
Screening of p-type transparent conducting materials for binary heavy metal chalcogenides
This study uses density functional theory to screen p-type transparent conductive materials (TCMs) for optoelectronic applications, focusing on binary heavy metal chalcogenides. 180 materials from the Materials Project Database were analyzed for electronic structures, optical properties, and transport characteristics. 16 candidates with bandgaps between 1 and 4 eV were identified. Further hybrid functional calculations, hole effective mass evaluations, and p-type conductivity analysis revealed 8 suitable materials, with 4 showing good stability. ZnS, ZnS2 and ZnTe performed best, with ZnTe manifesting conductivity of 240.84 S cm−1. The findings offer valuable insights for developing p-type materials in optoelectronics.
期刊介绍:
Covering major developments in the field of solid state chemistry and related areas such as ceramics and amorphous materials, the Journal of Solid State Chemistry features studies of chemical, structural, thermodynamic, electronic, magnetic, and optical properties and processes in solids.