Priyanka Sharma, Vaibhav Neema, Shailesh Singh Chouhan, Nitesh Kumar Soni
{"title":"用于卫星图像压缩系统的耐辐射SRAM:一种混合存储阵列方法","authors":"Priyanka Sharma, Vaibhav Neema, Shailesh Singh Chouhan, Nitesh Kumar Soni","doi":"10.1002/cta.4426","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This work is based on the design of an SRAM memory array for on board satellite image compression systems, including memory size, cost, power efficiency, and vulnerability to single event upsets (SEU). Initially, we designed a memory cell, RH_14T, specifically to mitigate the impact of SEUs. Subsequently, we incorporated RH_14T into the on-board memory array in two variations: RH_14T with minimal area overhead (RH_14T_small) and RH_14T with substantial area overhead (RH_14T_large), which have critical charges of 30.10 and 38.77 fC, respectively. Given the higher sensitivity of higher order bits compared to lower order bits in image pixels, RH_14T_small was allocated for the least significant bit (LSB) positions. RH_14_large, on the other hand, was used for the most significant bit (MSB) positions within the memory array. This configuration enhanced the array's overall area, power, and space radiation tolerance. Furthermore, the RH_14T model was bench marked against other recently introduced radiation-hardened SRAM cells and compared proposed RH_14T CC18T, RHC14T, RHMC12T, SARP12T, SRRD12T, DICE, and QUCCE12T across several critical design parameters. Notably, RH_14T's sensitive nodes can recover their original data even after radiation-induced value flips. In addition to these benefits, RH_14T also demonstrates a high static voltage noise margin and reduced read and write delays compared to most of the cells it was compared with.</p>\n </div>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 9","pages":"5562-5578"},"PeriodicalIF":1.6000,"publicationDate":"2025-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation-Tolerant SRAM for Satellite Image Compression Systems: A Hybrid Memory Array Approach\",\"authors\":\"Priyanka Sharma, Vaibhav Neema, Shailesh Singh Chouhan, Nitesh Kumar Soni\",\"doi\":\"10.1002/cta.4426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>This work is based on the design of an SRAM memory array for on board satellite image compression systems, including memory size, cost, power efficiency, and vulnerability to single event upsets (SEU). Initially, we designed a memory cell, RH_14T, specifically to mitigate the impact of SEUs. Subsequently, we incorporated RH_14T into the on-board memory array in two variations: RH_14T with minimal area overhead (RH_14T_small) and RH_14T with substantial area overhead (RH_14T_large), which have critical charges of 30.10 and 38.77 fC, respectively. Given the higher sensitivity of higher order bits compared to lower order bits in image pixels, RH_14T_small was allocated for the least significant bit (LSB) positions. RH_14_large, on the other hand, was used for the most significant bit (MSB) positions within the memory array. This configuration enhanced the array's overall area, power, and space radiation tolerance. Furthermore, the RH_14T model was bench marked against other recently introduced radiation-hardened SRAM cells and compared proposed RH_14T CC18T, RHC14T, RHMC12T, SARP12T, SRRD12T, DICE, and QUCCE12T across several critical design parameters. Notably, RH_14T's sensitive nodes can recover their original data even after radiation-induced value flips. In addition to these benefits, RH_14T also demonstrates a high static voltage noise margin and reduced read and write delays compared to most of the cells it was compared with.</p>\\n </div>\",\"PeriodicalId\":13874,\"journal\":{\"name\":\"International Journal of Circuit Theory and Applications\",\"volume\":\"53 9\",\"pages\":\"5562-5578\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-01-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Circuit Theory and Applications\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cta.4426\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuit Theory and Applications","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cta.4426","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Radiation-Tolerant SRAM for Satellite Image Compression Systems: A Hybrid Memory Array Approach
This work is based on the design of an SRAM memory array for on board satellite image compression systems, including memory size, cost, power efficiency, and vulnerability to single event upsets (SEU). Initially, we designed a memory cell, RH_14T, specifically to mitigate the impact of SEUs. Subsequently, we incorporated RH_14T into the on-board memory array in two variations: RH_14T with minimal area overhead (RH_14T_small) and RH_14T with substantial area overhead (RH_14T_large), which have critical charges of 30.10 and 38.77 fC, respectively. Given the higher sensitivity of higher order bits compared to lower order bits in image pixels, RH_14T_small was allocated for the least significant bit (LSB) positions. RH_14_large, on the other hand, was used for the most significant bit (MSB) positions within the memory array. This configuration enhanced the array's overall area, power, and space radiation tolerance. Furthermore, the RH_14T model was bench marked against other recently introduced radiation-hardened SRAM cells and compared proposed RH_14T CC18T, RHC14T, RHMC12T, SARP12T, SRRD12T, DICE, and QUCCE12T across several critical design parameters. Notably, RH_14T's sensitive nodes can recover their original data even after radiation-induced value flips. In addition to these benefits, RH_14T also demonstrates a high static voltage noise margin and reduced read and write delays compared to most of the cells it was compared with.
期刊介绍:
The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.