{"title":"低面积片上电复位电路的可扩展延迟扩展技术","authors":"Hamid Sadat Mansoury, Saeed Saeedi, Mojtaba Atarodi","doi":"10.1002/cta.4380","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>A scalable structure is presented and analyzed that can provide delays in a wide range (microseconds to minutes) for the power-on reset circuit. The proposed structure enables the implementation of these delays entirely on-chip through the utilization of a provisional oscillator and a set of flip-flops. The optimal number of flip-flops can be determined through an area optimization process. The proposed power-on reset circuit thresholds demonstrate the process, voltage, temperature (PVT) tolerance, facilitated by the use of resistors of the same type. Notably, the thresholds and provided delay for this circuit are supply-rise-time independent. The structure has been implemented in a 0.18-μm CMOS technology, occupying an active area of 48 × 40 μm<sup>2</sup>.</p>\n </div>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 9","pages":"5507-5517"},"PeriodicalIF":1.6000,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Scalable Delay-Expanding Technique for Low-Area On-Chip Power-On Reset Circuits\",\"authors\":\"Hamid Sadat Mansoury, Saeed Saeedi, Mojtaba Atarodi\",\"doi\":\"10.1002/cta.4380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>A scalable structure is presented and analyzed that can provide delays in a wide range (microseconds to minutes) for the power-on reset circuit. The proposed structure enables the implementation of these delays entirely on-chip through the utilization of a provisional oscillator and a set of flip-flops. The optimal number of flip-flops can be determined through an area optimization process. The proposed power-on reset circuit thresholds demonstrate the process, voltage, temperature (PVT) tolerance, facilitated by the use of resistors of the same type. Notably, the thresholds and provided delay for this circuit are supply-rise-time independent. The structure has been implemented in a 0.18-μm CMOS technology, occupying an active area of 48 × 40 μm<sup>2</sup>.</p>\\n </div>\",\"PeriodicalId\":13874,\"journal\":{\"name\":\"International Journal of Circuit Theory and Applications\",\"volume\":\"53 9\",\"pages\":\"5507-5517\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Circuit Theory and Applications\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cta.4380\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuit Theory and Applications","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cta.4380","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Scalable Delay-Expanding Technique for Low-Area On-Chip Power-On Reset Circuits
A scalable structure is presented and analyzed that can provide delays in a wide range (microseconds to minutes) for the power-on reset circuit. The proposed structure enables the implementation of these delays entirely on-chip through the utilization of a provisional oscillator and a set of flip-flops. The optimal number of flip-flops can be determined through an area optimization process. The proposed power-on reset circuit thresholds demonstrate the process, voltage, temperature (PVT) tolerance, facilitated by the use of resistors of the same type. Notably, the thresholds and provided delay for this circuit are supply-rise-time independent. The structure has been implemented in a 0.18-μm CMOS technology, occupying an active area of 48 × 40 μm2.
期刊介绍:
The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.