孔径为5 μm的低温1/2-λ腔型VCSEL在2.9 K下实现了35 mW的输出和140 Gbps的PAM-4光链路

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-08-14 DOI:10.1109/LPT.2025.3598825

Haonan Wu;Zetai Liu;Derek Chaw;Yulin He;Milton Feng

{"title":"孔径为5 μm的低温1/2-λ腔型VCSEL在2.9 K下实现了35 mW的输出和140 Gbps的PAM-4光链路","authors":"Haonan Wu;Zetai Liu;Derek Chaw;Yulin He;Milton Feng","doi":"10.1109/LPT.2025.3598825","DOIUrl":null,"url":null,"abstract":"High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula> cavity and <inline-formula> <tex-math>$5.0~\\mu $ </tex-math></inline-formula>m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I<inline-formula> <tex-math>${}_{\\mathrm {th}} =1.54$ </tex-math></inline-formula> mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 23","pages":"1361-1364"},"PeriodicalIF":2.5000,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11124861","citationCount":"0","resultStr":"{\"title\":\"Cryogenic 1/2-λ Cavity VCSEL With 5-μm Aperture Demonstrates Record Pout = 35 mW and 140 Gbps PAM-4 Optical Link at 2.9 K\",\"authors\":\"Haonan Wu;Zetai Liu;Derek Chaw;Yulin He;Milton Feng\",\"doi\":\"10.1109/LPT.2025.3598825\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-<inline-formula> <tex-math>$\\\\lambda $ </tex-math></inline-formula> cavity and <inline-formula> <tex-math>$5.0~\\\\mu $ </tex-math></inline-formula>m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I<inline-formula> <tex-math>${}_{\\\\mathrm {th}} =1.54$ </tex-math></inline-formula> mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 23\",\"pages\":\"1361-1364\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11124861\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11124861/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11124861/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

设计并制作了1/2- $\lambda $空腔和$5.0~\mu $ m氧化孔径的高功率、高速低温垂直腔面发射激光器。通过在保持低阈值电流（I ${}_{\mathrm {th}} =1.54$ mA）的情况下，有策略地蚀刻5个顶级p掺杂DBR对，该器件实现了前所未有的35 mW输出功率和2.9 - 77 K的最高线性度，用于高速，节能的光互连。该器件还实现了亚皮秒光子寿命和2.5 mA时超过50 GHz的带宽，实现了140 Gb/s的PAM-4低温光互连。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Cryogenic 1/2-λ Cavity VCSEL With 5-μm Aperture Demonstrates Record Pout = 35 mW and 140 Gbps PAM-4 Optical Link at 2.9 K

High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-

$\lambda $

cavity and

$5.0~\mu $

m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I

${}_{\mathrm {th}} =1.54$

mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.