{"title":"非对称MQW被动锁模激光器的宽带100ghz频率梳","authors":"Mohanad Al-Rubaiee;Bocang Qiu;Simeng Zhu;Xiao Sun;Ahmet Seckin Hezarfen;Zhefan Wang;John Marsh;Stephen J. Sweeney;Lianping Hou","doi":"10.1109/LPT.2025.3604691","DOIUrl":null,"url":null,"abstract":"We report a passively mode-locked AlGaInAs/InP laser diode based on an asymmetric multiple quantum well structure, designed for 100 GHz optical frequency comb generation near <inline-formula> <tex-math>$1.5~\\mu $ </tex-math></inline-formula>m. The active region comprises quantum wells with two different photoluminescence wavelengths by using different thicknesses but identical material composition, optimized to enhance spectral overlap and broaden the modal gain profile. The device delivers a −3 dB optical bandwidth of 10.14 nm, spanning 14 lines with a spacing of 0.78 nm. To the best of our knowledge, this is the widest bandwidth reported from any directly electrically pumped quantum-well passively mode-locked laser diode. These results demonstrate a compact and practical approach to generating wideband optical frequency combs using asymmetric multiple quantum well mode-locked laser diodes.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 23","pages":"1365-1368"},"PeriodicalIF":2.5000,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband 100 GHz Frequency Comb From an Asymmetric MQW Passively Mode-Locked Laser\",\"authors\":\"Mohanad Al-Rubaiee;Bocang Qiu;Simeng Zhu;Xiao Sun;Ahmet Seckin Hezarfen;Zhefan Wang;John Marsh;Stephen J. Sweeney;Lianping Hou\",\"doi\":\"10.1109/LPT.2025.3604691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a passively mode-locked AlGaInAs/InP laser diode based on an asymmetric multiple quantum well structure, designed for 100 GHz optical frequency comb generation near <inline-formula> <tex-math>$1.5~\\\\mu $ </tex-math></inline-formula>m. The active region comprises quantum wells with two different photoluminescence wavelengths by using different thicknesses but identical material composition, optimized to enhance spectral overlap and broaden the modal gain profile. The device delivers a −3 dB optical bandwidth of 10.14 nm, spanning 14 lines with a spacing of 0.78 nm. To the best of our knowledge, this is the widest bandwidth reported from any directly electrically pumped quantum-well passively mode-locked laser diode. These results demonstrate a compact and practical approach to generating wideband optical frequency combs using asymmetric multiple quantum well mode-locked laser diodes.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 23\",\"pages\":\"1365-1368\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11145765/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11145765/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Broadband 100 GHz Frequency Comb From an Asymmetric MQW Passively Mode-Locked Laser
We report a passively mode-locked AlGaInAs/InP laser diode based on an asymmetric multiple quantum well structure, designed for 100 GHz optical frequency comb generation near $1.5~\mu $ m. The active region comprises quantum wells with two different photoluminescence wavelengths by using different thicknesses but identical material composition, optimized to enhance spectral overlap and broaden the modal gain profile. The device delivers a −3 dB optical bandwidth of 10.14 nm, spanning 14 lines with a spacing of 0.78 nm. To the best of our knowledge, this is the widest bandwidth reported from any directly electrically pumped quantum-well passively mode-locked laser diode. These results demonstrate a compact and practical approach to generating wideband optical frequency combs using asymmetric multiple quantum well mode-locked laser diodes.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.