利用沟槽栅垂直FBFET (TG-V-FBFET)陡峭的阈下斜率实现漏积分和火神经元

IF 3 Q2 PHYSICS, CONDENSED MATTER
Zuber Rasool , S. Intekhab Amin , Dinesh Prasad , Mohd Faizan , Naveen Kumar
{"title":"利用沟槽栅垂直FBFET (TG-V-FBFET)陡峭的阈下斜率实现漏积分和火神经元","authors":"Zuber Rasool ,&nbsp;S. Intekhab Amin ,&nbsp;Dinesh Prasad ,&nbsp;Mohd Faizan ,&nbsp;Naveen Kumar","doi":"10.1016/j.micrna.2025.208311","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we have proposed a Trench gate vertical feedback field-effect transistor (TG-V-FBFET) utilizing the positive feedback mechanism. Simulation and result extraction of the device is done using computer aided TCAD tool (ATLAS-SILVACO). Proposed device exhibits Subthreshold swing (SS) of 0.013mV/dec and on state current (I<sub>on</sub>) of 0.1 mA/μm with overall I<sub>on</sub>/I<sub>off</sub> = 10<sup>10</sup>.Overall on chip area can be reduce up to 66 % compared to lateral FBFET counter-part. Further-more, steep subthreshold slope characteristic of the device is exploited for the producing of Leaky Integrate and Fire neuron like spiking behavior. Circuit level simulations consisting proper resetting as well, is also done to properly implement single LIF neuron. Proposed LIF neuron shows a spiking frequency of 0.86GHz/spike and energy of 0.13pJ/spike for input current and threshold potential of 0.9 mA and 1.3 V respectively.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208311"},"PeriodicalIF":3.0000,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Implementation of Leaky Integrate and Fire neuron using Trench gate vertical FBFET (TG-V-FBFET) exploiting its steep subthreshold slope\",\"authors\":\"Zuber Rasool ,&nbsp;S. Intekhab Amin ,&nbsp;Dinesh Prasad ,&nbsp;Mohd Faizan ,&nbsp;Naveen Kumar\",\"doi\":\"10.1016/j.micrna.2025.208311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we have proposed a Trench gate vertical feedback field-effect transistor (TG-V-FBFET) utilizing the positive feedback mechanism. Simulation and result extraction of the device is done using computer aided TCAD tool (ATLAS-SILVACO). Proposed device exhibits Subthreshold swing (SS) of 0.013mV/dec and on state current (I<sub>on</sub>) of 0.1 mA/μm with overall I<sub>on</sub>/I<sub>off</sub> = 10<sup>10</sup>.Overall on chip area can be reduce up to 66 % compared to lateral FBFET counter-part. Further-more, steep subthreshold slope characteristic of the device is exploited for the producing of Leaky Integrate and Fire neuron like spiking behavior. Circuit level simulations consisting proper resetting as well, is also done to properly implement single LIF neuron. Proposed LIF neuron shows a spiking frequency of 0.86GHz/spike and energy of 0.13pJ/spike for input current and threshold potential of 0.9 mA and 1.3 V respectively.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"208 \",\"pages\":\"Article 208311\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012325002407\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325002407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

在这项工作中,我们提出了一种利用正反馈机制的沟槽栅垂直反馈场效应晶体管(TG-V-FBFET)。利用计算机辅助TCAD工具(ATLAS-SILVACO)对该装置进行了仿真和结果提取。该器件的亚阈值摆幅(SS)为0.013mV/dec,导通电流(Ion)为0.1 mA/μm,总Ion/Ioff = 1010。总的片上面积可减少高达66%的横向fbet对应部分。此外,利用该器件陡峭的阈下斜率特性产生漏积分和类似火神经元的尖峰行为。电路级模拟包括适当的复位,也做了正确实现单个LIF神经元。当输入电流为0.9 mA,阈值电位为1.3 V时,LIF神经元的峰值频率为0.86GHz/尖峰,能量为0.13pJ/尖峰。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implementation of Leaky Integrate and Fire neuron using Trench gate vertical FBFET (TG-V-FBFET) exploiting its steep subthreshold slope
In this work, we have proposed a Trench gate vertical feedback field-effect transistor (TG-V-FBFET) utilizing the positive feedback mechanism. Simulation and result extraction of the device is done using computer aided TCAD tool (ATLAS-SILVACO). Proposed device exhibits Subthreshold swing (SS) of 0.013mV/dec and on state current (Ion) of 0.1 mA/μm with overall Ion/Ioff = 1010.Overall on chip area can be reduce up to 66 % compared to lateral FBFET counter-part. Further-more, steep subthreshold slope characteristic of the device is exploited for the producing of Leaky Integrate and Fire neuron like spiking behavior. Circuit level simulations consisting proper resetting as well, is also done to properly implement single LIF neuron. Proposed LIF neuron shows a spiking frequency of 0.86GHz/spike and energy of 0.13pJ/spike for input current and threshold potential of 0.9 mA and 1.3 V respectively.
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CiteScore
6.50
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